MMBF2202PT1 TMOS MOSFET Datasheet

MMBF2202PT1 Datasheet, PDF, Equivalent


Part Number

MMBF2202PT1

Description

P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBF2202PT1 Datasheet


MMBF2202PT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF2202PT1/D
Low rDS(on) Small-Signal MOSFETs
TMOS Single P-Channel
Field Effect Transistors
Part of the GreenLinePortfolio of devices with energy–con-
serving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC–70/SOT–323 Surface Mount Package Saves
Board Space
1
GATE
3 DRAIN
MMBF2202PT1
Motorola Preferred Device
P–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 2.2 OHM
CASE 419–02, STYLE 7
SC–70/SOT–323
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage — Continuous
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Operating and Storage Temperature Range
Thermal Resistance — Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
P3
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2202PT1
78 mm embossed tape
3000
MMBF2202PT3
138 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol
VDSS
VGS
ID
ID
IDM
PD
TJ, Tstg
RθJA
TL
Value
Unit
20 Vdc
± 20 Vdc
300 mAdc
240
750
150 mW
1.2 mW/°C
– 55 to 150 °C
833 °C/W
260 °C
REV 1
©MMotootorroollaa, SInmc. 1a9ll95Signal Transistors, FETs and Diodes Device Data
1

MMBF2202PT1
MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = –15 Vdc,
RL = 75 , ID = 200 mAdc,
VGEN = –10 V, RG = 6.0 )
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage(2)
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
Typ Max Unit
— — Vdc
µAdc
— 1.0
— 10
±100
nAdc
1.7 2.4 Vdc
Ohms
1.5 2.2
2.0 3.5
600 — mMhos
50 — pF
45 —
20 —
2.5
1.0
16
8.0
2700
ns
pC
— 0.3
— 0.75
1.5 —
A
V
10
8 ID = 200 mA
6
4
2
0
01
234 56 78
VGS, GATE–SOURCE VOLTAGE (VOLTS)
9 10
Figure 1. On Resistance versus Gate–Source Voltage
4.0
3.5 VGS = 4.5 V
3.0 ID = 50 mA
2.5
2.0
1.5
VGS = 10 V
ID = 200 mA
1.0
0.5
0
– 40 – 20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF2202PT1/ D MMBF2202PT1 Low rDS(on) Small-Signa l MOSFETs TMOS Single P-Channel Field E ffect Transistors Part of the GreenLine ™ Portfolio of devices with energy– conserving traits. These miniature surf ace mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device id eal for use in small power management c ircuitry. Typical applications are dc dc converters, power management in por table and battery– powered products s uch as computers, printers, PCMCIA card s, cellular and cordless telephones. Low rDS(on) Provides Higher Efficienc y and Extends Battery Life • Miniatur e SC–70/SOT–323 Surface Mount Packa ge Saves Board Space 1 GATE 2 SOURCE M otorola Preferred Device P–CHANNEL E NHANCEMENT–MODE TMOS MOSFET rDS(on) = 2.2 OHM ™ CASE 419–02, STYLE 7 SC –70/SOT–323 3 DRAIN MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–to–So.
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