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MMBF2202PT1 Dataheets PDF



Part Number MMBF2202PT1
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Description Power MOSFET
Datasheet MMBF2202PT1 DatasheetMMBF2202PT1 Datasheet (PDF)

MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) Provides Higher .

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MMBF2202PT1 Preferred Device Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small power management circuitry. Typical applications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (Note 1.) Derate above 25°C Operating and Storage Temperature Range Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID ID IDM PD 150 1.2 TJ, Tstg RθJA TL − 55 to 150 833 260 mW mW/°C °C °C/W °C 1 2 P3 W = Device Code = Work Week 3 SC−70/SOT−323 CASE 419 STYLE 8 P3W Value 20 ± 20 300 240 750 Unit Vdc Vdc mAdc 2 1 http://onsemi.com 300 mAMPS 20 VOLTS RDS(on) = 2.2 W P−Channel 3 MARKING DIAGRAM 1. Mounted on G10/FR4 glass epoxy board using minimum recommended footprint. PIN ASSIGNMENT 3 Drain Gate 1 2 Source Top View ORDERING INFORMATION Device MMBF2202PT1 Package SC−70/ SOT−323 Shipping 3000 Tape & Reel Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 1 November, 2003 − Rev. 4 Publication Order Number: MMBF2202PT1/D MMBF2202PT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 µA) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3.) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) (VDD = −15 Vdc, RL = 75 Ω, ID = 200 mAdc mAdc, VGEN = −10 10 V, RG = 6.0 Ω) td(on) tr td(off) tf QT − − − − − 2.5 1.0 16 8.0 2700 − − − − − pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss − − − 50 45 20 − − − pF VGS(th) rDS(on) − − gFS − 1.5 2.0 600 2.2 3.5 − mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS − − IGSS − − − − 1.0 10 ±100 nAdc 20 − − Vdc µAdc Symbol Min Typ Max Unit SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage (Note 3.) 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. IS ISM VSD − − − − − 1.5 0.3 0.75 − V A TYPICAL CHARACTERISTICS 10 r DS(on) , ON RESISTANCE (OHMS) 8 6 4 2 0 ID = 200 mA r DS(on) , ON RESISTANCE (OHMS) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 −40 −20 0 20 40 60 80 100 120 140 160 VGS = 10 V ID = 200 mA VGS = 4.5 V ID = 50 mA 0 1 2 3 4 5 6 7 8 9 10 VGS, GATE−SOURCE VOLTAGE (VOLTS) TEMPERATURE (°C) Figure 1. On Resistance versus Gate−Source Voltage http://onsemi.com 2 Figure 2. On Resistance versus Temperature MMBF2202PT1 TYPICAL CHARACTERISTICS 6 RDS(on) , ON RESISTANCE (OHMS) 5 4 3 2 1 0 VGS = 10 V VGS = 4.5 V 1.0 0.9 I D, DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 −55 150 25 ID, DRAIN CURRENT (AMPS) VGS, GATE−SOURCE VOLTAGE (VOLTS) Figure 3. On Resistance versus Drain Current Figure 4. Transfer Characteristics 1 ID(on), DRAIN CURRENT (AMPS) IS , SOURCE CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 VGS = 5 V 25° 0.1 150° VGS = 4.5 V VGS = 4 V VGS = 3.5 V VGS = 3 V 7 8 9 10 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 VSD, SOURCE−DRAIN FORWARD VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 5. Source−Drain Forward Voltage Figure 6. On Region Characteristics 50 45 40 C, CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 Ciss Coss Crss 16 18 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) VGS = 0 V f = 1 MHz Figure 7. Capacitance Variation http://onsemi.com 3 MMBF2202PT1 INFORMATION FOR USING THE SC−70/SOT−323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.025 0.65 interface between the board and the package.


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