MMBF2202PT1 Power MOSFET Datasheet

MMBF2202PT1 Datasheet, PDF, Equivalent


Part Number

MMBF2202PT1

Description

Power MOSFET

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBF2202PT1 Datasheet


MMBF2202PT1
MMBF2202PT1
Preferred Device
Power MOSFET
300 mAmps, 20 Volts
P−Channel SC−70/SOT−323
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SC−70/SOT−323 Surface Mount Package Saves
Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed Drain Current (tp 10 µs)
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
VDSS
VGS
ID
ID
IDM
PD
20 Vdc
± 20 Vdc
mAdc
300
240
750
150 mW
1.2 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg − 55 to
150
°C
Thermal Resistance − Junction−to−Ambient RθJA
833 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL
260 °C
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
http://onsemi.com
300 mAMPS
20 VOLTS
RDS(on) = 2.2 W
P−Channel
3
1
2
MARKING
DIAGRAM
1
2
3
SC−70/SOT−323
CASE 419
STYLE 8
P3W
P3 = Device Code
W = Work Week
PIN ASSIGNMENT
3 Drain
© Semiconductor Components Industries, LLC, 2003
November, 2003 − Rev. 4
Gate 1
2 Source
Top View
ORDERING INFORMATION
Device
Package
Shipping
MMBF2202PT1
SC−70/ 3000 Tape & Reel
SOT−323
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBF2202PT1/D

MMBF2202PT1
MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
(VGS = 4.5 Vdc, ID = 50 mAdc)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
Transfer Capacitance
(VDG = 5.0 V)
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = −15 Vdc,
RL = 75 , ID = 200 mAdc,
VGEN = −10 V, RG = 6.0 )
Gate Charge (See Figure 5)
(VDS = 16 V, VGS = 10 V,
ID = 200 mA)
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 3.)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
rDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
20
1.0
Typ Max Unit
− − Vdc
µAdc
− 1.0
− 10
±100
nAdc
1.7 2.4 Vdc
Ohms
1.5 2.2
2.0 3.5
600 − mMhos
50 − pF
45 −
20 −
2.5
1.0
16
8.0
2700
ns
pC
− 0.3
− 0.75
1.5 −
A
V
TYPICAL CHARACTERISTICS
10
8 ID = 200 mA
6
4
2
0
01
234 56 78
VGS, GATE−SOURCE VOLTAGE (VOLTS)
9 10
Figure 1. On Resistance versus Gate−Source Voltage
4.0
3.5 VGS = 4.5 V
3.0 ID = 50 mA
2.5
2.0
1.5
VGS = 10 V
ID = 200 mA
1.0
0.5
0
−40 −20 0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 2. On Resistance versus Temperature
http://onsemi.com
2


Features MMBF2202PT1 Preferred Device Power MOSF ET 300 mAmps, 20 Volts P−Channel SC 70/SOT−323 These miniature surface m ount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in small p ower management circuitry. Typical appl ications are d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d battery−power ed products such as computers, printers , PCMCIA cards, cellular and cordless t elephones. • Low RDS(on) Provides Hig her Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surfac e Mount Package Saves Board Space MAXIM UM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain−to−Source Volt age Gate−to−Source Voltage − Cont inuous Drain Current − Continuous @ T A = 25°C − Continuous @ TA = 70°C Pulsed Drain Current (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C ( Note 1.) Derate above 25°C Operating a nd Storage Temperature Range Thermal Resistance − Junction−to−Ambient Maximum Lead Temperature for Solder.
Keywords MMBF2202PT1, datasheet, pdf, ON, Power, MOSFET, MBF2202PT1, BF2202PT1, F2202PT1, MMBF2202PT, MMBF2202P, MMBF2202, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)