MMBF4117 N-Channel Switch Datasheet

MMBF4117 Datasheet, PDF, Equivalent


Part Number

MMBF4117

Description

N-Channel Switch

Manufacture

Fairchild

Total Page 12 Pages
Datasheet
Download MMBF4117 Datasheet


MMBF4117
Discrete POWER & Signal
Technologies
PN4117
PN4118
PN4119
MMBF4117
MMBF4118
MMBF4119
G
G
SD
TO-92
SOT-23
S
Mark: 61A / 61C / 61E
D
N-Channel Switch
This device is designed for low current DC and audio applications.
These devices provide excellent performance as input stages for
sub-picoamp instrumentation or any high impedance signal
sources. Sourced from Process 53.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG Drain-Gate Voltage
40
VGS Gate-Source Voltage
- 40
IGF Forward Gate Current
50
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN4117
350
2.8
125
*MMBF4117
225
1.8
357 556
Units
V
V
mA
°C
Units
mW
mW /°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation

MMBF4117
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
N-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
IG = 1.0 µA, VDS = 0
VGS = 20 V, VDS = 0
VGS = 20 V, VDS = 0, TA = 150°C
VDS = 10 V, ID = 1.0 nA PN4117
PN4118
PN4119
- 40
- 0.6
- 1.0
- 2.0
- 10
- 25
- 1.8
- 3.0
- 6.0
V
pA
nA
V
V
V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
VDS = 10 V, VGS = 0
PN4117
PN4118
PN4119
30
80
200
90
240
600
µA
µA
µA
SMALL-SIGNAL CHARACTERISTICS
gfs
goss
Re(yfs)
Ciss
Crss
Common-Source Forward
Transconductance
Common-Source Output Conductance
Common-Source Forwad
Transconductance
Input Capacitance
Reverse Transfer Capacitance
VDS = 10 V VGS = 0, f= 1.0 kHz
PN4117
PN4118
PN4119
VDS = 10 V VGS = 0, f= 1.0 kHz
PN4117
PN4118
PN4119
VDS = 10 V, VGS = 0, f= 30 MHz
PN4117
PN4118
PN4119
VDS = 10 V, VGS = 0, f= 1.0 kHz
VDS = 10 V, VGS = 0, f= 1.0 MHz,
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%
70
80
100
60
70
90
210 µmhos
250 µmhos
330 µmhos
3.0 µmhos
5.0 µmhos
10 µmhos
µmhos
µmhos
µmhos
3.0 pF
1.5 pF


Features PN4117 / PN4118 / PN4119 / MMBF4117 / MM BF4118 / MMBF4119 Discrete POWER & Sig nal Technologies PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 G D G S T O-92 D SOT-23 Mark: 61A / 61C / 61E S N-Channel Switch This device is desig ned for low current DC and audio applic ations. These devices provide excellent performance as input stages for sub-pi coamp instrumentation or any high imped ance signal sources. Sourced from Proce ss 53. Absolute Maximum Ratings* Symbo l VDG VGS IGF TJ ,Tstg Drain-Gate Volta ge Gate-Source Voltage Forward Gate Cur rent TA = 25°C unless otherwise noted Parameter Value 40 - 40 50 -55 to +1 50 Units V V mA °C Operating and Sto rage Junction Temperature Range *These ratings are limiting values above whic h the serviceability of any semiconduct or device may be impaired. NOTES: 1) Th ese ratings are based on a maximum junc tion temperature of 150 degrees C. 2) T hese are steady state limits. The facto ry should be consulted on applications involving pulsed or low du.
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