MMBF4391LT1 Switching Transistors Datasheet

MMBF4391LT1 Datasheet, PDF, Equivalent


Part Number

MMBF4391LT1

Description

JFET Switching Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBF4391LT1 Datasheet


MMBF4391LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF4391LT1/D
JFET Switching Transistors
N–Channel
2 SOURCE
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
3
GATE
MAXIMUM RATINGS
Rating
Symbol
Value
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Forward Gate Current
THERMAL CHARACTERISTICS
VDS
VDG
VGS
IG(f)
30
30
30
50
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
556
– 55 to +150
MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G
1 DRAIN
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Off–State Drain Current
(VDS = 15 Vdc, VGS = –12 Vdc)
(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C)
 1. FR– 5 = 1.0 0.75 0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Min Max Unit
30 — Vdc
— 1.0 nAdc
— 0.20 µAdc
Vdc
–4.0 –10
–2.0 –5.0
–0.5 –3.0
— 1.0 nAdc
— 1.0 µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBF4391LT1
MMBF4391LT1 MMBF4392LT1 MMBF4393LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Drain–Source On–Voltage
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
(ID = 3.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Static Drain–Source On–Resistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALL– SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Symbol
IDSS
VDS(on)
rDS(on)
Ciss
Crss
Min
50
25
5.0
Max Unit
mAdc
150
75
30
Vdc
0.4
0.4
0.4
30
60
100
14 pF
3.5 pF
TYPICAL CHARACTERISTICS
1000
500
200 RK = RD’
100
50
TJ = 25°C
MMBF4391
MMBF4392
VGS(off) = 12 V
= 7.0 V
MMBF4393
= 5.0 V
20
10
5.0 RK = 0
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
ID, DRAIN CURRENT (mA)
Figure 1. Turn–On Delay Time
1000
500
200
100
50
RK = RD’
TJ = 25°C
MMBF4391 VGS(off) = 12 V
MMBF4392
= 7.0 V
MMBF4393
= 5.0 V
20
10 RK = 0
5.0
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
ID, DRAIN CURRENT (mA)
Figure 2. Rise Time
1000
500
200
100
50
RK = RD’
TJ = 25°C
MMBF4391 VGS(off) = 12 V
MMBF4392
= 7.0 V
MMBF4393
= 5.0 V
20
10
5.0
2.0
1.0
0.5 0.7 1.0
RK = 0
2.0 3.0 5.0 7.0 10
20 30 50
ID, DRAIN CURRENT (mA)
Figure 3. Turn–Off Delay Time
1000
500
200
100
50
RK = RD’
TJ = 25°C
MMBF4391
MMBF4392
VGS(off) = 12 V
= 7.0 V
MMBF4393
= 5.0 V
20 RK = 0
10
5.0
2.0
1.0
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50
ID, DRAIN CURRENT (mA)
Figure 4. Fall Time
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF4391LT1/D J FET Switching Transistors N–Channel 2 SOURCE 3 GATE MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 3 1 1 DRAIN MAXIMUM RATI NGS Rating Drain–Source Voltage Drain –Gate Voltage Gate–Source Voltage F orward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vd c mAdc 2 CASE 318 – 08, STYLE 10 SO T– 23 (TO – 236AB) THERMAL CHARACT ERISTICS Characteristic Total Device Di ssipation FR– 5 Board(1) TA = 25°C D erate above 25°C Thermal Resistance, J unction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW /°C °C/W °C DEVICE MARKING MMBF4391 LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characte ristic Symbol Min Max Unit OFF CHARACT ERISTICS Gate–Source Breakdown Voltag e (IG = 1.0 µAdc, VDS = 0) Gate Revers e Current (VGS = 15 Vdc, VDS = 0, TA = 25°C) (VGS = 15 Vdc, VDS = 0, TA = 100°C) Gate–Sour.
Keywords MMBF4391LT1, datasheet, pdf, Motorola, JFET, Switching, Transistors, MBF4391LT1, BF4391LT1, F4391LT1, MMBF4391LT, MMBF4391L, MMBF4391, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)