Switching Transistors. MMBF4392L Datasheet


MMBF4392L Transistors. Datasheet pdf. Equivalent


Part Number

MMBF4392L

Description

JFET Switching Transistors

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBF4392L Datasheet


MMBF4392L
MMBF4391L, MMBF4392L,
MMBF4393L
JFET Switching Transistors
NChannel
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
VDS 30 Vdc
DrainGate Voltage
VDG
30 Vdc
GateSource Voltage
VGS 30 Vdc
Forward Gate Current
IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, JunctiontoAmbient RqJA
556 °C/W
Junction and Storage Temperature Range TJ, Tstg 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR5 = 1.0  0.75  0.062 in.
www.onsemi.com
3
1
2
SOT23
CASE 318
STYLE 10
2 SOURCE
3
GATE
1 DRAIN
MARKING DIAGRAM
XXX M G
G
1
XXX = Specific Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MARKING & ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
October, 2016 Rev. 12
1
Publication Order Number:
MMBF4391LT1/D

MMBF4392L
MMBF4391L, MMBF4392L, MMBF4393L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
GateSource Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
V(BR)GSS
IGSS
VGS(off)
30
4.0
2.0
0.5
1.0
0.20
10
5.0
3.0
Vdc
nAdc
mAdc
Vdc
OffState Drain Current
(VDS = 15 Vdc, VGS = 12 Vdc)
(VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C)
ON CHARACTERISTICS
ID(off)
1.0 nAdc
1.0 mAdc
ZeroGateVoltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
IDSS
mAdc
50 150
25 75
5.0 30
DrainSource OnVoltage
(ID = 12 mAdc, VGS = 0)
MMBF4391LT1
(ID = 6.0 mAdc, VGS = 0)
MMBF4392LT1
(ID = 3.0 mAdc, VGS = 0)
MMBF4393LT1
VDS(on)
Vdc
0.4
0.4
0.4
Static DrainSource OnResistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
rDS(on)
W
30
60
100
SMALLSIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 0 Vdc, VGS = 15 Vdc, f = 1.0 MHz)
Ciss
pF
14
Reverse Transfer Capacitance
(VDS = 0 Vdc, VGS = 12 Vdc, f = 1.0 MHz)
Crss
pF
3.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
Marking
Package
Shipping
MMBF4391LT1G
6J
SMMBF4391LT1G*
MMBF4392LT1G
MMBF4393LT1G
6J
6K
M6G
SOT23
(PbFree)
3,000 / Tape & Reel
SMMBF4393LT1G*
M6G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2


Features MMBF4391L, MMBF4392L, MMBF4393L JFET Sw itching Transistors N−Channel Feature s • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q10 1 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM R ATINGS Rating Symbol Value Unit Dr ain−Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−So urce Voltage VGS 30 Vdc Forward Gate Current IG(f) 50 mAdc THERMAL CHARACT ERISTICS Characteristic Total Device D issipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Symbol PD Ma x 225 1.8 Unit mW mW/°C Thermal Resi stance, Junction−to−Ambient RqJA 5 56 °C/W Junction and Storage Temperat ure Range TJ, Tstg −55 to +150 °C S tresses exceeding those listed in the M aximum Ratings table may damage the dev ice. If any of these limits are exceede d, device functionality should not be a ssumed, damage may occur and reliability may be affected. 1. FR.
Keywords MMBF4392L, datasheet, pdf, ON, JFET, Switching, Transistors, MBF4392L, BF4392L, F4392L, MMBF4392, MMBF439, MMBF43, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)