MMBF4392LT1 Switching Transistors Datasheet

MMBF4392LT1 Datasheet, PDF, Equivalent


Part Number

MMBF4392LT1

Description

JFET Switching Transistors

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBF4392LT1 Datasheet


MMBF4392LT1
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MMBF4391LT1,
MMBF4392LT1,
MMBF4393LT1
JFET Switching Transistors
N−Channel
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDS 30 Vdc
Drain−Gate Voltage
VDG
30 Vdc
Gate−Source Voltage
VGS
30 Vdc
Forward Gate Current
IG(f) 50 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
PD
(Note 1) TA = 25°C
225 mW
Derate above 25°C
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
3
1
2
SOT−23
CASE 318
STYLE 10
MARKING DIAGRAM
6x M G
G
1
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
6x = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
DEVICE MARKING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBF4391LT1/D

MMBF4392LT1
MMBF4391LT1, MMBF4392LT1, MMBF4393LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate−Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Off−State Drain Current
(VDS = 15 Vdc, VGS = −12 Vdc)
(VDS = 15 Vdc, VGS = −12 Vdc, TA = 100°C)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
Drain−Source On−Voltage
(ID = 12 mAdc, VGS = 0)
(ID = 6.0 mAdc, VGS = 0)
(ID = 3.0 mAdc, VGS = 0)
Static Drain−Source On−Resistance
(ID = 1.0 mAdc, VGS = 0)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
SMALL− SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 0, VGS = 12 Vdc, f = 1.0 MHz)
Symbol
V(BR)GSS
IGSS
VGS(off)
ID(off)
IDSS
VDS(on)
rDS(on)
Ciss
Crss
Min
30
−4.0
−2.0
−0.5
50
25
5.0
Max Unit
− Vdc
1.0
0.20
−10
−5.0
−3.0
1.0
1.0
150
75
30
0.4
0.4
0.4
30
60
100
14
3.5
nAdc
mAdc
Vdc
nAdc
mAdc
mAdc
Vdc
W
pF
pF
ORDERING INFORMATION
Device
Marking
Package
Shipping
MMBF4391LT1
6J SOT−23
MMBF4391LT1G
6J
SOT−23
(Pb−Free)
MMBF4392LT1
MMBF4392LT1G
6K SOT−23
6K
SOT−23
(Pb−Free)
3000 / Tape & Reel
MMBF4393LT1
6G SOT−23
MMBF4393LT1G
6G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Features www.DataSheet4U.com MMBF4391LT1, MMBF43 92LT1, MMBF4393LT1 JFET Switching Trans istors N−Channel http://onsemi.com Fe atures 2 SOURCE • Pb−Free Packages are Available MAXIMUM RATINGS Rating D rain−Source Voltage Drain−Gate Volt age Gate−Source Voltage Forward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc 1 3 G ATE 1 DRAIN 3 THERMAL CHARACTERISTIC S Characteristic Total Device Dissipati on FR− 5 Board (Note 1) TA = 25°C De rate above 25°C Thermal Resistance, Ju nction−to−Ambient Junction and Stor age Temperature Range Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/ °C °C/W °C Max Unit 2 SOT−23 CAS E 318 STYLE 10 Maximum ratings are tho se values beyond which device damage ca n occur. Maximum ratings applied to the device are individual stress limit val ues (not normal operating conditions) a nd are not valid simultaneously. If the se limits are exceeded, device function al operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.
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