MMBF4416 RF Amplifiers Datasheet

MMBF4416 Datasheet, PDF, Equivalent


Part Number

MMBF4416

Description

N-Channel RF Amplifiers

Manufacture

Fairchild

Total Page 5 Pages
Datasheet
Download MMBF4416 Datasheet


MMBF4416
April 2009
MMBF4416
N-Channel RF Amplifiers
• This device is designed for RF amplifiers.
• Sourced from process 50.
G
S
SOT-23
D Mark: 6A
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Junction and Storage Temperature Range
Value
30
-30
10
-55 to +150
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1μA
IGSS
Gate Reverse Current
VGS = -20V, VDS = 0
VGS = -20V, VDS = 0, TA = 150°C
VGS(off)
VGS
Gate Source Cut-off Voltage
Gate Source Voltage
VDS = 15V, ID = 1nA
VDS = 15V, ID = 0.5mA
On Characteristics
-30 V
-1
-200
nA
nA
-2.5 -6 V
-1 -5.5 V
IDSS
VGS(f)
Zero-Gate Voltage Drain Current
Gate-Source Forward Voltage
VGS = 15V, VGS = 0
VDS = 0, IG = 1mA
5
Small Signal Characteristics
lYfsl
lyosl
Ciss
Crss
Coss
Forward Transfer Admittance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
VDS = 15V, VGS = 0, f = 1KHz
VDS = 15V, VGS = 0, f = 1KHz
VDS = 15V, VGS = 0, f = 1MHz
VDS = 15V, VGS = 0, f = 1MHz
VDS = 15V, VGS = 0, f = 1MHz
4500
Functional Characteristics
NF Noise Figure
VDS = 15V, ID = 5mA, Rg = 100Ω, f = 100MHz
Gps
Common Source Power Gain
VDS = 15V, ID = 5mA, Rg = 100Ω, f = 100MHz 18
15 mA
1V
7500 μmhos
50 μmhos
4 PF
0.9 PF
2 PF
2 dB
dB
© 2009 Fairchild Semiconductor Corporation
MMBF4416 Rev. B2
1
www.fairchildsemi.com

MMBF4416
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
Max.
225
1.8
556
Units
mW
mW/°C
°C/W
© 2009 Fairchild Semiconductor Corporation
MMBF4416 Rev. B2
2
www.fairchildsemi.com


Features MMBF4416 — N-Channel RF Amplifiers Ap ril 2009 MMBF4416 N-Channel RF Amplifi ers • This device is designed for RF amplifiers. • Sourced from process 50 . G S SOT-23 D Mark: 6A Absolute Max imum Ratings TA=25°C unless otherwise noted Symbol Parameter VDG VGS IGF T J, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Junction and Storage Temperature Range Value 30 -30 10 -55 to +150 Units V V mA °C Electrical Characteristics TA=25°C unl ess otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)GSS Gate-Sour ce Breakdown Voltage VDS = 0, IG = 1μA IGSS Gate Reverse Current VGS = -20 V, VDS = 0 VGS = -20V, VDS = 0, TA = 15 0°C VGS(off) VGS Gate Source Cut-off Voltage Gate Source Voltage VDS = 15V , ID = 1nA VDS = 15V, ID = 0.5mA On Ch aracteristics -30 V -1 -200 nA nA - 2.5 -6 V -1 -5.5 V IDSS VGS(f) Zero- Gate Voltage Drain Current Gate-Source Forward Voltage VGS = 15V, VGS = 0 VDS = 0, IG = 1mA 5 Small.
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