MMBF4416

MMBF4416 — N-Channel RF Amplifiers April 2009 MMBF4416 N-Channel RF Amplifiers This device is designed for RF amplifiers. Sourced from process 50. G S SOT-23 D Mark: 6A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Junction and Storage Temperature Range Value 30 -30 10 -55 to +150 Units V V mA °C Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage VDS = 0, IG = 1μA IGSS Gate Reverse Current VGS = -20V, VDS = 0 VGS = -20V, VDS = 0, TA = 150°C VGS(off) VGS Gate Source Cut-off Voltage Gate Source Voltage VDS = 15V, ID = 1nA VDS = 15V, ID = 0.5mA On Characteristics -30 V -1 -200 nA nA -2.5 -6 V -1 -5.5 V IDSS VGS(f) Zero-Gate Voltage Drain Current Gate-Source Forward Voltage VGS = 15V, VGS = 0 VDS = 0, IG = 1mA 5 Small...