Amplifier Transistor. MMBF4416LT1 Datasheet


MMBF4416LT1 Transistor. Datasheet pdf. Equivalent


MMBF4416LT1


JFET VHF/UHF Amplifier Transistor
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MMBF4416LT1
Preferred Device

JFET VHF/UHF Amplifier Transistor
N−Channel
Features http://onsemi.com
2 SOURCE

• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc 3 Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2 SOT−23 (TO−236) CASE 318 STYLE 10 1 DRAIN 3 GATE

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 1

M6A M G G

M6A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.

ORDERING INFORMATION
Device MMBF4416LT1 MMBF4416LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel

SOT−23 3,000 / Tape & Reel (Pb−Free)

†For information on tape and reel specifi...



MMBF4416LT1
www.DataSheet4U.com
MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
N−Channel
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage
Gate−Source Voltage
Gate Current
VDS 30 Vdc
VDG 30 Vdc
VGS 30 Vdc
IG 10 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
M6A M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
M6A = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBF4416LT1 SOT−23 3,000 / Tape & Reel
MMBF4416LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBF4416LT1/D

MMBF4416LT1
MMBF4416LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = 1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 150°C)
Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc)
Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VGS = 15 Vdc, VGS = 0)
Gate−Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Symbol Min Max Unit
V(BR)GSS
IGSS
VGS(off)
VGS
30
− 1.0
1.0
200
− 6.0
− 5.5
Vdc
nAdc
Vdc
Vdc
IDSS
VGS(f)
5.0 15 mAdc
− 1.0 Vdc
|Yfs|
|yos|
Ciss
Crss
Coss
4500
7500
50
4.0
0.8
2.0
mmhos
mmhos
pF
pF
pF
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
brs @ IDSS
0.25 IDSS
bis @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis)
0.1
0.07
0.05
10
grs @ IDSS, 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Reverse Transfer Admittance (yrs)
20
10
7.0 gfs @ IDSS
5.0
3.0 gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 4. Output Admittance (yos)
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2




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