MMBF5457LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5457LT1/D JFET Ċ General Purpose Transistor N–Channel 2 SOURCE 3 GATE MMBF5457LT1 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Reverse Gate–Source Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 25 10 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBF5457LT1 = 6D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 100 µAdc) V(BR)GSS IGSS — — VGS(off) VGS 0.5 — — — — – 2.5 1.0 200 – 6.0 — Vdc Vdc 25 — — Vdc nAdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR– 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width ≤ 630 ms, Duty Cycle ≤ 10%. IDSS 1.0 — 5.0 mAdc   Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MMBF5457LT1 ELECTRICAL CHARACTERISTICS (TA...