MMBF5459 Purpose Amplifier Datasheet

MMBF5459 Datasheet, PDF, Equivalent


Part Number

MMBF5459

Description

N-Channel General Purpose Amplifier

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBF5459 Datasheet


MMBF5459
Discrete POWER & Signal
Technologies
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
G
G
SD
TO-92
SOT-23
S
Mark: 6D / 61S / 6L
D
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ, Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
- 25
10
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
Max
2N5457
625
5.0
83.3
200
*MMBF5457
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Units
mW
mW /°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation

MMBF5459
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
VGS Gate-Source Voltage
IG = 10 µA, VDS = 0
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 100°C
VDS = 15 V, ID = 10 nA 2N5457
2N5458
2N5459
VDS = 15 V, ID = 100 µA
VDS = 15 V, ID = 200 µA
VDS = 15 V, ID = 400 µA
2N5457
2N5458
2N5459
- 25
- 0.5
- 1.0
- 2.0
- 2.5
- 3.5
- 4.5
- 1.0
- 200
- 6.0
- 7.0
- 8.0
V
nA
nA
V
V
V
V
V
V
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
VDS = 15 V, VGS = 0
2N5457 1.0 3.0 5.0 mA
2N5458 2.0 6.0 9.0 mA
2N5459 4.0 9.0 16 mA
SMALL SIGNAL CHARACTERISTICS
gfs
Forward Transfer Conductance*
VDS = 15 V, VGS = 0, f = 1.0 kHz
2N5457 1000
5000 µmhos
2N5458 1500
5500 µmhos
2N5459 2000
6000 µmhos
gos Output Conductance*
VDS = 15 V, VGS = 0, f = 1.0 kHz
10 50 µmhos
Ciss Input Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
4.5 7.0 pF
Crss
Reverse Transfer Capacitance
VDS = 15 V, VGS = 0, f = 1.0 MHz
1.5 3.0 pF
NF Noise Figure
VDS = 15 V, VGS = 0, f = 1.0 kHz,
RG = 1.0 megohm, BW = 1.0 Hz
3.0 dB
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2%
Typical Characteristics
Transfer Characteristics
Transfer Characteristics


Features 2N5457 / 2N5458 / 2N5459 / MMBF5457 / MM BF5458 / MMBF5459 Discrete POWER & Sig nal Technologies 2N5457 2N5458 2N5459 MMBF5457 MMBF5458 MMBF5459 G D G S T O-92 D SOT-23 Mark: 6D / 61S / 6L S N-Channel General Purpose Amplifier Thi s device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Max imum Ratings* Symbol VDG VGS IGF TJ, Ts tg Drain-Gate Voltage Gate-Source Volta ge Forward Gate Current TA = 25°C unl ess otherwise noted Parameter Value 2 5 - 25 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temper ature Range *These ratings are limitin g values above which the serviceability of any semiconductor device may be imp aired. NOTES: 1) These ratings are base d on a maximum junction temperature of 150 degrees C. 2) These are steady stat e limits. The factory should be consult ed on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJ.
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