Purpose Transistor. MMBF5460LT1 Datasheet


MMBF5460LT1 Transistor. Datasheet pdf. Equivalent


MMBF5460LT1


JFET General Purpose Transistor
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MMBF5460LT1 JFET − General Purpose Transistor
P−Channel
Features http://onsemi.com
2 SOURCE

• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc 1 DRAIN 3 GATE

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C SOT−23 (TO−236) CASE 318 STYLE 10 Max Unit 1 2 3

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in.

MARKING DIAGRAM

M6E M G G 1

M6E = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.

ORDERING INFORMATION
Device MMBF5460LT1 MMBF5460LT1G Package SOT−23 Shipping † 3,000 / Tape & Reel

SOT−23 3,000 / Tape & Reel (Pb−Free)

†For information on tape and reel specifications, including part orientat...



MMBF5460LT1
www.DataSheet4U.com
MMBF5460LT1
JFET − General Purpose
Transistor
P−Channel
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Gate Voltage
Reverse Gate−Source Voltage
Forward Gate Current
THERMAL CHARACTERISTICS
VDG
VGSR
IGF
40 Vdc
40 Vdc
10 mAdc
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 2
M6E M G
G
1
M6E = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBF5460LT1 SOT−23 3,000 / Tape & Reel
MMBF5460LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
MMBF5460LT1/D

MMBF5460LT1
MMBF5460LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(IG = 10 mAdc, VDS = 0)
V(BR)GSS
40
− Vdc
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
(VGS = 20 Vdc, VDS = 0, TA = 100°C)
IGSS
− − 5.0 nAdc
− − 1.0 mAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 1.0 mAdc)
VGS(off)
0.75
6.0 Vdc
Gate Source Voltage
(VDS = 15 Vdc, ID = 0.1 mAdc)
VGS 0.5 − 4.0 Vdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
IDSS
−1.0
− 5.0
mAdc
SMALL−SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs| 1000 − 4000 mmhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos| − − 75 mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss − 5.0 7.0 pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss − 1.0 2.0 pF
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2




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