MMBF5484LT1 JFET Transistor Datasheet

MMBF5484LT1 Datasheet, PDF, Equivalent


Part Number

MMBF5484LT1

Description

JFET Transistor

Manufacture

Motorola

Total Page 10 Pages
Datasheet
Download MMBF5484LT1 Datasheet


MMBF5484LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF5484LT1/D
JFET Transistor
N–Channel
2 SOURCE
MMBF5484LT1
3
GATE
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Drain–Gate Voltage
Reverse Gate–Source Voltage
Forward Gate Current
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
Storage Channel Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBF5484LT1 = 6B
Symbol
VDG
VGS(r)
IG(f)
PD
Tstg
Symbol
PD
RqJA
TJ, Tstg
1 DRAIN
Value
25
25
10
200
2.8
– 65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current
(VGS = – 20 Vdc, VDS = 0)
(VGS = – 20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL– SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
 1. FR– 5 = 1.0 0.75 0.062 in.
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
|Yfs|
|yos|
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Min
– 25
– 0.3
Max
– 1.0
– 0.2
– 3.0
Unit
Vdc
nAdc
µAdc
Vdc
1.0 5.0 mAdc
3000
6000
50
µmhos
µmhos
1

MMBF5484LT1
MMBF5484LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
SMALL– SIGNAL CHARACTERISTICS (Continued)
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss — 5.0 pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Crss — 1.0 pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Coss — 2.0 pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VDS = 15 Vdc, ID = 1.0 mAdc, YG= 1.0 mmhos)
(RG = 1.0 k, f = 100 MHz)
(VDS = 15 Vdc, VGS = 0, YG= 1.0 µmhos)
(RG = 1.0 M, f = 1.0 kHz)
NF dB
— 3.0
— 2.5
Common Source Power Gain
(VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz)
Gps 16 25 dB
POWER GAIN
24
f = 100 MHz
20
16
12 400 MHz
8.0 Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
4.0
0 2.0 4.0 6.0 8.0 10 12 14
ID, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF5484LT1/D J FET Transistor N–Channel 2 SOURCE 3 G ATE MMBF5484LT1 Motorola Preferred Dev ice 1 DRAIN MAXIMUM RATINGS Rating Dr ain–Gate Voltage Reverse Gate–Sourc e Voltage Forward Gate Current Continuo us Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Ch annel Temperature Range Symbol VDG VGS( r) IG(f) PD 200 2.8 Tstg – 65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL C HARACTERISTICS Characteristic Total Dev ice Dissipation FR– 5 Board(1) TA = 2 5°C Derate above 25°C Thermal Resista nce, Junction to Ambient Junction and S torage Temperature Symbol PD Max 225 1. 8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MM BF5484LT1 = 6B ELECTRICAL CHARACTERIST ICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OF F CHARACTERISTICS Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate Reverse Cur.
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