JFET Transistor. MMBF5484LT1 Datasheet


MMBF5484LT1 Transistor. Datasheet pdf. Equivalent


MMBF5484LT1


JFET Transistor
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MMBF5484LT1
Preferred Device

JFET Transistor
N−Channel
Features

• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25°C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg −65 to +150 mW mW/°C °C Value 25 25 10 Unit Vdc Vdc mAdc

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2 SOURCE

3 GATE

1 DRAIN

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA TJ, Tstg 556 −55 to +150 mW mW/°C °C/W °C Max Unit 1 2

3

SOT−23 (TO−236) CASE 318 STYLE 10

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 1

M6B M G G

M6B = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.

ORDERING INFORMATION
Device MMBF5484LT1 MMBF5484LT1G ...



MMBF5484LT1
www.DataSheet4U.com
MMBF5484LT1
Preferred Device
JFET Transistor
N−Channel
Features
Pb−Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Drain−Gate Voltage
VDG
Reverse Gate−Source Voltage
VGS(r)
Forward Gate Current
IG(f)
Continuous Device Dissipation at or Below
TC = 25°C
Linear Derating Factor
PD
Value
25
25
10
200
2.8
Unit
Vdc
Vdc
mAdc
mW
mW/°C
Storage Channel Temperature Range
THERMAL CHARACTERISTICS
Tstg −65 to +150 °C
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
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2 SOURCE
3
GATE
1 DRAIN
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 10
MARKING DIAGRAM
M6B M G
G
1
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
M6B = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBF5484LT1 SOT−23 3,000 / Tape & Reel
MMBF5484LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MMBF5484LT1/D

MMBF5484LT1
MMBF5484LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0)
Gate Reverse Current
(VGS = − 20 Vdc, VDS = 0)
(VGS = − 20 Vdc, VDS = 0, TA = 100°C)
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current (VDS = 15 Vdc, VGS = 0)
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 10 MHz)
Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Symbol Min Max Unit
V(BR)GSS
IGSS
VGS(off)
− 25
− 0.3
− 1.0
− 0.2
− 3.0
Vdc
nAdc
mAdc
Vdc
IDSS
1.0 5.0 mAdc
|Yfs|
|yos|
Ciss
Crss
Coss
3000
6000
50
5.0
1.0
2.0
mmhos
mmhos
pF
pF
pF
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
brs @ IDSS
0.25 IDSS
bis @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis)
0.1
0.07
0.05
10
grs @ IDSS, 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Reverse Transfer Admittance (yrs)
20
10
7.0 gfs @ IDSS
5.0
3.0 gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
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2
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30 50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 4. Output Admittance (yos)




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