P-Channel Switch. MMBFJ176 Datasheet


MMBFJ176 Switch. Datasheet pdf. Equivalent


MMBFJ176


P-Channel Switch
J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177

J174 J175 J176 J177

MMBFJ175 MMBFJ176 MMBFJ177

G

D S G

TO-92
D

SOT-23
Mark: 6W / 6X / 6Y

S

P-Channel Switch
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current

TA = 25°C unless otherwise noted

Parameter

Value
- 30 30 50 -55 to +150

Units
V V mA °C

Operating and Storage Junction Temperature Range

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RθJC RθJA

TA = 25°C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J174 - J177 350 2.8 125 357

Max
*MMBFJ175 225 1.8 556

Units
mW mW/°C °C/W °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

1997 Fairchild Semiconductor Corporation

J174-177, Rev. A

J174 / J175 / J176 / J177 / MMBFJ175 / MMBFJ176 / MMBFJ177

P-Channel Switch
(continued)

Ele...



MMBFJ176
J174
J175
J176
J177
MMBFJ175
MMBFJ176
MMBFJ177
SG D
TO-92
G
SOT-23 S
Mark: 6W / 6X / 6Y
D
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ ,Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
- 30
30
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
J174 - J177
350
2.8
125
*MMBFJ175
225
1.8
357 556
Units
mW
mW /°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
J174-177, Rev. A

MMBFJ176
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
P-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
B(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
rDS(on)
Drain-Source On Resistance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IG = 1.0 µA, VDS = 0
30 V
VGS = 20 V, VDS = 0
1.0 nA
VDS = - 15 V, ID = - 10 nA
J174
J175
J176
J177
5.0
3.0
1.0
0.8
10
6.0
4.0
2.5
V
V
V
V
VDS = - 15 V, IGS = 0
VDS 0.1 V, VGS = 0
J174 - 20 - 100
J175 - 7.0
- 60
J176 - 2.0
- 25
J177 - 1.5
- 20
J174
85
J175
125
J176
250
J177
300
mA
mA
mA
mA
Typical Characteristics
Common Drain-Source
-20
T A= 25°C
TYP V GS(off) = 4.5 V
-16
0.5 V
V GS = 0 V
-12
1.0 V
1.5 V
-8
2.0 V
-4 2.5 V 3.0 V 3.5 V
0
0 -1 -2 -3 -4 -5
VDS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
100
1,000
50 500
I DSS
r DS g fs
10 100
5 50
I DSS , g fs @ VDS = 15V,
V GS = 0 PULSED
r DS @ -100 mV, VGS = 0
V GS(off) @ V DS = - 15V,
I D = - 1.0 µA
1 10
12
5 10
VGS (OFF) - GATE CUTOFF VOLTAGE (V)




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