MMBFJ177 P-Channel Switch Datasheet

MMBFJ177 Datasheet, PDF, Equivalent


Part Number

MMBFJ177

Description

P-Channel Switch

Manufacture

Fairchild

Total Page 5 Pages
Datasheet
Download MMBFJ177 Datasheet


MMBFJ177
J174
J175
J176
J177
MMBFJ175
MMBFJ176
MMBFJ177
SG D
TO-92
G
SOT-23 S
Mark: 6W / 6X / 6Y
D
P-Channel Switch
This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG
VGS
IGF
TJ ,Tstg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
- 30
30
50
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
J174 - J177
350
2.8
125
*MMBFJ175
225
1.8
357 556
Units
mW
mW /°C
°C/W
°C/W
1997 Fairchild Semiconductor Corporation
J174-177, Rev. A

MMBFJ177
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
P-Channel Switch
(continued)
Min Max Units
OFF CHARACTERISTICS
B(BR)GSS
Gate-Source Breakdown Voltage
IGSS Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
IDSS Zero-Gate Voltage Drain Current*
rDS(on)
Drain-Source On Resistance
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
IG = 1.0 µA, VDS = 0
30 V
VGS = 20 V, VDS = 0
1.0 nA
VDS = - 15 V, ID = - 10 nA
J174
J175
J176
J177
5.0
3.0
1.0
0.8
10
6.0
4.0
2.5
V
V
V
V
VDS = - 15 V, IGS = 0
VDS 0.1 V, VGS = 0
J174 - 20 - 100
J175 - 7.0
- 60
J176 - 2.0
- 25
J177 - 1.5
- 20
J174
85
J175
125
J176
250
J177
300
mA
mA
mA
mA
Typical Characteristics
Common Drain-Source
-20
T A= 25°C
TYP V GS(off) = 4.5 V
-16
0.5 V
V GS = 0 V
-12
1.0 V
1.5 V
-8
2.0 V
-4 2.5 V 3.0 V 3.5 V
0
0 -1 -2 -3 -4 -5
VDS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
100
1,000
50 500
I DSS
r DS g fs
10 100
5 50
I DSS , g fs @ VDS = 15V,
V GS = 0 PULSED
r DS @ -100 mV, VGS = 0
V GS(off) @ V DS = - 15V,
I D = - 1.0 µA
1 10
12
5 10
VGS (OFF) - GATE CUTOFF VOLTAGE (V)


Features J174 / J175 / J176 / J177 / MMBFJ175 / M MBFJ176 / MMBFJ177 J174 J175 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 G D S G TO-92 D SOT-23 Mark: 6W / 6X / 6Y S P-Channel Switch This device is design ed for low level analog switching sampl e and hold circuits and chopper stabili zed amplifiers. Sourced from Process 88 . Absolute Maximum Ratings* Symbol VDG VGS IGF TJ ,Tstg Drain-Gate Voltage Ga te-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Par ameter Value - 30 30 50 -55 to +150 U nits V V mA °C Operating and Storage Junction Temperature Range *These rati ngs are limiting values above which the serviceability of any semiconductor de vice may be impaired. NOTES: 1) These r atings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory sh ould be consulted on applications invol ving pulsed or low duty cycle operation s. Thermal Characteristics Symbol PD R θJC RθJA TA = 25°C unless otherwise noted Characteristic Total .
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