MMBFJ177LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFJ177LT1/D JFET Chopper P–Channel — Depletion 3 GATE 2 SOURCE MMBFJ177LT1 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol VDG VGS(r) Value 25 – 25 Unit Vdc Vdc 2 CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBFJ177LT1 = 6Y ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate–Source Breakdown Voltage (VDS = 0, ID = 1.0 µAdc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 30 — 0.8 — 1.0 2.5 Vdc nAdc Vdc ON CHARACTERISTICS Zero–Gate–Voltage Drain Current(2) (VGS = 0, VDS = 15 Vdc) Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) Drain Source On Resistance (ID = 500 µAdc) Input Capacitance Reverse Transfer Capacitance VDS = 0, , VGS = 10 Vdc f = 1.0 MHz IDSS ID(off) rDS(on) Ciss Crss 1.5 — — — — 20 1.0 300 11 5.5 mAdc nAdc Ω pF 1. FR– 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle ≤ 2%.   Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, In...