Amplifier. MMBFJ201 Datasheet

MMBFJ201 Amplifier. Datasheet pdf. Equivalent


Part Number

MMBFJ201

Description

N-Channel General Purpose Amplifier

Manufacture

Fairchild

Total Page 9 Pages
Datasheet
Download MMBFJ201 Datasheet


MMBFJ201
MMBFJ201 / MMBFJ202
N-Channel General-Purpose Amplifier
January 2015
Description
This device is designed primarily for low level audio
and general-purpose applications with high imped-
ance signal sources. Sourced from process 52.
G
SOT-23
S
Note: Source & Drain
D are interchangeable
Ordering Information
Part Number
MMBFJ201
MMBFJ202
Top Mark
62P
62Q
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
40
-40
50
-55 to 150
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
MMBFJ201 / MMBFJ202 Rev. 1.4
www.fairchildsemi.com

MMBFJ201
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Total Device Dissipation
PD Derate Above 25°C
350 mW
2.8 mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
357 °C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0
IGSS Gate Reverse Current
VGS = -20 V, VDS = 0
VGS(off) Gate-Source Cut-Off Voltage
VDS = 20 V, ID = 10 nA
MMBFJ201
MMBFJ202
-40
-0.3
-0.8
On Characteristics
IDSS
Zero-Gate Voltage Drain
Current(4)
VDS = 20 V, IGS = 0
MMBFJ201 0.2
MMBFJ202 0.9
Small Signal Characteristics
yFS Forward Transfer Admittance
MMBFJ201 500
VDS = 20 V, f = 1.0 kHz MMBFJ202 1000
Typ.
Max. Unit
-100
-1.5
-4.0
V
pA
V
1.0
mA
4.5
μmhos
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%
© 1997 Fairchild Semiconductor Corporation
MMBFJ201 / MMBFJ202 Rev. 1.4
2
www.fairchildsemi.com


Features MMBFJ201 / MMBFJ202 — N-Channel Genera l-Purpose Amplifier MMBFJ201 / MMBFJ20 2 N-Channel General-Purpose Amplifier January 2015 Description This device i s designed primarily for low level audi o and general-purpose applications with high impedance signal sources. Sourced from process 52. G SOT-23 S Note: So urce & Drain D are interchangeable Ord ering Information Part Number MMBFJ201 MMBFJ202 Top Mark 62P 62Q Package SOT -23 3L SOT-23 3L Packing Method Tape a nd Reel Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding th e absolute maximum ratings may damage t he device. The device may not function or be operable above the recommended op erating conditions and stressing the pa rts to these levels is not recommended. In addition, extended exposure to stre sses above the recommended operating co nditions may affect device reliability. The absolute maximum ratings are stres s ratings only. Values are at TA = 25° C unless otherwise noted. Symbol Parameter Value Unit VDG .
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