RF Amplifier. MMBFJ210 Datasheet


MMBFJ210 Amplifier. Datasheet pdf. Equivalent


Part Number

MMBFJ210

Description

N-Channel RF Amplifier

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBFJ210 Datasheet


MMBFJ210
J210
J211
J212
G
SD
TO-92
MMBFJ210
MMBFJ211
MMBFJ212
G
SOT-23
Mark: 62V / 62W / 62X
S
D NOTE: Source & Drain
are interchangeable
N-Channel RF Amplifier
This device is designed for HF/VHF mixer/amplifier and
applications where Process 50 is not adequate. Sufficient
gain and low noise for sensitive receivers. Sourced from
Process 90.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ ,Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
25
- 25
10
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
J210-212
350
2.8
125
357
Max
*MMBFJ210-212
225
1.8
556
Units
mW
mW/°C
°C/W
°C/W
5
1997 Fairchild Semiconductor Corporation
J210/J211/J212/MMBFJ210/J211/J212, Rev A

MMBFJ210
N-Channel RF Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)GSS
IG S S
VGS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
ON CHARACTERISTICS
ID S S
Zero-Gate Voltage Drain Current*
SMALL SIGNAL CHARACTERISTICS
gfs Common Source Forward
Transconductance
goss
Common Source Output
Conductance
*Pulse Test: Pulse Width 300 µS
IG = 1.0 µA, V DS = 0
VGS = 15 V, VDS = 0
VDS = 15 V, ID = 1.0 nA
- 25
210
211
212
-1.0
- 2.5
- 4.0
- 100
-3.0
- 4.5
- 6.0
V
pA
V
V
V
VDS = 15 V, V GS = 0
210 2.0 15 m A
211
7.0
20
mA
212 15
40 m A
VDS = 15 V, V GS = 0, f = 1.0 kHz
210
211
212
VDS = 15 V, V GS = 0, f = 1.0 kHz
4000
6000
7000
12,000
12,000
12,000
200
µmhos
µmhos
µmhos
µmhos
Typical Characteristics
Parameter Interactions
Common Drain-Source


Features J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 M MBFJ211 MMBFJ212 G S G S TO-92 D SOT -23 Mark: 62V / 62W / 62X D NOTE: Sou rce & Drain are interchangeable N-Chan nel RF Amplifier This device is designe d for HF/VHF mixer/amplifier and applic ations where Process 50 is not adequate . Sufficient gain and low noise for sen sitive receivers. Sourced from Process 90. Absolute Maximum Ratings* Symbol V DG VGS IGF TJ ,Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Curren t TA = 25°C unless otherwise noted P arameter Value 25 - 25 10 -55 to +150 Units V V mA °C Operating and Storag e Junction Temperature Range 5 *These ratings are limiting values above whic h the serviceability of any semiconduct or device may be impaired. NOTES: 1) Th ese ratings are based on a maximum junc tion temperature of 150 degrees C. 2) T hese are steady state limits. The facto ry should be consulted on applications involving pulsed or low duty cycle operations. Thermal Character.
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