MMBFJ270 P-Channel Switch Datasheet

MMBFJ270 Datasheet, PDF, Equivalent


Part Number

MMBFJ270

Description

P-Channel Switch

Manufacture

Fairchild

Total Page 3 Pages
Datasheet
Download MMBFJ270 Datasheet


MMBFJ270
MMBFJ270
P-Channel Switch
• This device is designed for low level analog switching sample and hold
circuits and chopper stabilized amplifiers.
• Sourced from process 88.
G
S
D
SOT-23
Mark: 61S
1. Drain 2. Gate 3. Source
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
-30
30
50
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS Gate-Source Breakdwon Voltage
IGSS
Gate Reverse Current
VGS(off)
Gate-Source Cutoff Voltage
On Characteristics
IG = -1.0µA, VDS = 0
VGS = -20V, VDS = 0
VDS = -15V, ID = 1.0nA
IDSS
Zero-Gate Voltage Drain Current *
Small Signal Characteristics
VDS = -15V, VGS = 0
gfs
goss
Forward Transferconductance
Common- Source Output Conductance
VGS = 0V, VDS = 15V, f = 1.0kHz
VGS = 0V, VDS = 15V, f = 1.0kHz
Min.
30
0.5
-2.0
6000
Max. Units
V
200 pA
2.0 V
-15 mA
15000 µmhos
200 µmhos
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJA
Thermal Resistance, Junction to Ambient
Max.
225
1.8
556
Units
mW
mW/°C
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, February 2004

MMBFJ270
Package Dimensions
SOT-23
0.40 ±0.03
0.40 ±0.03
2.90 ±0.10
0.96~1.14
0.03~0.10
0.38 REF
0.12
+0.05
–0.023
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
©2004 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, February 2004


Features MMBFJ270 MMBFJ270 P-Channel Switch • This device is designed for low level a nalog switching sample and hold circuit s and chopper stabilized amplifiers. Sourced from process 88. G S D SOT- 23 Mark: 61S 1. Drain 2. Gate 3. Sourc e Absolute Maximum Ratings* Ta=25°C u nless otherwise noted Symbol VDG VGS IG F TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Curre nt Operating and Storage Junction Tempe rature Range Ratings -30 30 50 -55 ~ 15 0 Units V V mA °C * This ratings are limiting values above which the service ability of any semiconductor device may be impaired. NOTES: 1) These rating ar e based on a maximum junction temperatu re of 150 degrees C. 2) These are stead y limits. The factory should be consult ed on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwi se noted Symbol Off Characteristics V(B R)GSS IGSS VGS(off) IDSS gfs goss Param eter Test Condition IG = -1.0µA, VDS = 0 VGS = -20V, VDS = 0 VDS = -15.
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