MMBFJ309 RF Amplifier Datasheet

MMBFJ309 Datasheet, PDF, Equivalent


Part Number

MMBFJ309

Description

N-Channel RF Amplifier

Manufacture

Fairchild

Total Page 7 Pages
Datasheet
Download MMBFJ309 Datasheet


MMBFJ309
January 2015
MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Description
This device is designed for VHF/UHF amplifier, oscil-
lator and mixer applications. As a common gate
amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz
can be realized. Sourced from process 92. Source &
Drain are interchangeable.
G
SOT-23
S
Note: Source & Drain
D are interchangeable
Ordering Information
Part Number
MMBFJ309
MMBFJ310
Top Mark
6U
6T
Package
SOT-23 3L
SOT-23 3L
Packing Method
Tape and Reel
Tape and Reel
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
-25
10
-55 to 150
V
V
mA
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
Total Device Dissipation
PD Derate Above 25°C
350 mW
2.8 mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
357 °C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
www.fairchildsemi.com

MMBFJ309
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0
IGSS Gate Reverse Current
VGS = -15 V, VDS = 0
VGS = -15 V, VDS = 0, TA = 125°C
VGS(off) Gate-Source Cut-Off Voltage
MMBFJ309
VDS = 10 V, ID = 1.0 nA MMBFJ310
-25
-1.0
-2.0
V
-1.0 nA
-1.0 μA
-4.0
V
-6.5
On Characteristics
IDSS
Zero-Gate Voltage Drain
Current(4)
VDS = 10 V, VGS = 0
MMBFJ309 12
MMBFJ310 24
30
mA
60
VGS(f) Gate-Source Forward Voltage
Small Signal Characteristics
VDS = 0, IG = 1.0 mA
1.0 V
Re(yis)
Common-Source Input
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 100 MHz
MMBFJ310
0.7
0.5
mmhos
Re(yos)
Common-Source Output
Conductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
0.25
mmhos
Gpg
Re(yfs)
Re(yig)
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
VDS = 10 V, ID = 10 mA, f = 100 MHz
VDS = 10 V, ID = 10 mA, f = 100 MHz
VDS = 10 V, ID = 10 mA, f = 100 MHz
16 dB
12 mmhos
12 mmhos
gfs
Common-Source Forward
Transconductance
VDS = 10 V, ID = 10 mA, MMBFJ309 10000
f = 1.0 kHz
MMBFJ310 8000
20000
μmhos
18000
goss
Common-Source Output
Conductance
VDS = 10 V, ID = 10 mA, f = 1.0 kHz
150 μmhos
gfg
Common-Gate Forward
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 1.0 kHz
MMBFJ310
13000
12000
μmhos
gog
Common-Gate Output
Conductance
VDS = 10 V, ID = 10 mA, MMBFJ309
f = 1.0 kHz
MMBFJ310
100
150
μmhos
Cdg Drain-Gate Capacitance
Csg Source-Gate Capacitance
NF Noise Figure
en
Equivalent Short-Circuit Input
Noise Voltage
VDS = 0, VGS = -10 V, f = 1.0 MHz
VDS = 0, VGS = -10 V, f = 1.0 MHz
VDS = 10 V, ID = 10 mA, f = 450 MHz
VDS = 10 V, ID = 10 mA, f = 100 Hz
2.0 2.5
4.1 5.0
3.0
pF
pF
dB
6.0 nV/ Hz
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%
© 1997 Fairchild Semiconductor Corporation
MMBFJ309 / MMBFJ310 Rev. 1.5
2
www.fairchildsemi.com


Features MMBFJ309 / MMBFJ310 — N-Channel RF Amp lifier January 2015 MMBFJ309 / MMBFJ3 10 N-Channel RF Amplifier Description This device is designed for VHF/UHF amp lifier, oscillator and mixer applicatio ns. As a common gate amplifier, 16 dB a t 100 MHz and 12 dB at 450 MHz can be r ealized. Sourced from process 92. Sourc e & Drain are interchangeable. G SOT-2 3 S Note: Source & Drain D are interch angeable Ordering Information Part Nu mber MMBFJ309 MMBFJ310 Top Mark 6U 6T Package SOT-23 3L SOT-23 3L Packing M ethod Tape and Reel Tape and Reel Abso lute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may n ot function or be operable above the re commended operating conditions and stre ssing the parts to these levels is not recommended. In addition, extended expo sure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratin gs are stress ratings only. Values are at TA = 25°C unless oth.
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