MMBFJ310LT1 Amplifier Transistor Datasheet

MMBFJ310LT1 Datasheet, PDF, Equivalent


Part Number

MMBFJ310LT1

Description

JFET VHF/UHF Amplifier Transistor

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBFJ310LT1 Datasheet


MMBFJ310LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBFJ309LT1/D
JFET VHF/UHF Amplifier Transistor
N–Channel
2 SOURCE
MMBFJ309LT1
MMBFJ310LT1
3
GATE
1 DRAIN
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
Symbol
VDS
VGS
IG
Symbol
PD
RqJA
TJ, Tstg
Value
25
25
10
Max
225
1.8
556
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current (VGS = –15 Vdc)
Gate Reverse Current (VGS = –15 Vdc, TA = 125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
MMBFJ309
MMBFJ310
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
SMALL–SIGNAL CHARACTERISTICS
MMBFJ309
MMBFJ310
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Equivalent Short–Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
 1. FR– 5 = 1.0 0.75 0.062 in.
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
Symbol
V(BR)GSS
IGSS
VGS(off)
IDSS
VGS(f)
|Yfs|
|yos|
Ciss
Crss
en
Min
– 25
– 1.0
– 2.0
12
24
8.0
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Typ Max Unit
— — Vdc
– 1.0
nAdc
– 1.0
µAdc
– 4.0
Vdc
— – 6.5
— 30 mAdc
— 60
— 1.0 Vdc
— 18 mmhos
— 250 µmhos
— 5.0 pF
— 2.5 pF
10 — nVń ǸHz
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBFJ310LT1
MMBFJ309LT1 MMBFJ310LT1
50
SOURCE
U310
C3
L1 C1
C5
L2P
C2
C6
50
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4I.D. (Air Core).
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70 70
60
VDS = 10 V
50
IDSS
40 + 25°C
TA = – 55°C
+ 25°C
60
50
40
30 +150°C 30
20
+ 25°C
20
– 55°C
10 +150°C 10
–5.0 –4.0 –3.0 –2.0 –1.0
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
0
0
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
35
30 VDS = 10 V
f = 1.0 MHz
25
TA = – 55°C
+ 25°C
20
15
10
5.0
0
5.0
+150°C
– 55°C
+ 25°C
+150°C
4.0 3.0 2.0 1.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
0
Figure 3. Forward Transconductance
versus Gate–Source Voltage
100 k
10 k
1.0 k
Yfs Yfs
100
1.0 k
VGS(off) = – 2.3 V =
10
Yos VGS(off) = – 5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
10 120
RDS
96
7.0
72
Cgs
4.0 48
Cgd
1.0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
24
0
0
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFJ309LT1/D J FET VHF/UHF Amplifier Transistor N–C hannel 3 GATE MMBFJ309LT1 MMBFJ310LT1 2 SOURCE 1 DRAIN 3 1 MAXIMUM RATING S Rating Drain–Source Voltage Gate– Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 10 SOT– 2 3 (TO – 236AB) THERMAL CHARACTERISTI CS Characteristic Total Device Dissipat ion FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junctio n to Ambient Junction and Storage Tempe rature Symbol PD Max 225 1.8 RqJA TJ, T stg 556 – 55 to +150 Unit mW mW/°C C/W °C DEVICE MARKING MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T ELECTRICAL CHARAC TERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Ma x Unit OFF CHARACTERISTICS Gate–Sour ce Breakdown Voltage (IG = –1.0 µAdc , VDS = 0) Gate Reverse Current (VGS = –15 Vdc) Gate Reverse Current (VGS = –15 Vdc, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ309 MMBFJ.
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