MMBFU310LT1 JFET Transistor Datasheet

MMBFU310LT1 Datasheet, PDF, Equivalent


Part Number

MMBFU310LT1

Description

JFET Transistor

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBFU310LT1 Datasheet


MMBFU310LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBFU310LT1/D
JFET Transistor
N–Channel
2 SOURCE
MMBFU310LT1
3
GATE
Motorola Preferred Device
1 DRAIN
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Gate Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBFU310LT1 = 6C
Symbol
VDS
VGS
IG
Value
25
25
10
Symbol
PD
RqJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)
Gate 1 Leakage Current (VGS = –15 Vdc, VDS = 0)
Gate 2 Leakage Current (VGS = –15 Vdc, VDS = 0, TA = 125°C)
Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0)
Gate–Source Forward Voltage (IG = 10 mAdc, VDS = 0)
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance
(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer Capacitance
(VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
 1. FR– 5 = 1.0 0.75 0.062 in.
Symbol
V(BR)GSS
IG1SS
IG2SS
VGS(off)
IDSS
VGS(f)
|Yfs|
|yos|
Ciss
Crss
3
1
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
Min
– 25
– 2.5
24
10
Max Unit
– 150
– 150
– 6.0
Vdc
pA
nAdc
Vdc
60 mAdc
1.0 Vdc
18 mmhos
250 µmhos
5.0 pF
2.5 pF
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MMBFU310LT1
MMBFU310LT1
50
SOURCE
U310
C3
L1 C1
C5
L2P
C2
C6
50
LOAD
L2S
C4
C7
1.0 k
RFC
+VDD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4I.D. (Air Core).
L2P = One Turn #16 Cu, 1/4I.D. (Air Core).
L2S = One Turn #16 Cu, 1/4I.D. (Air Core).
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70 70
60
VDS = 10 V
50
IDSS
40 + 25°C
TA = – 55°C
+ 25°C
60
50
40
30 +150°C 30
20
+ 25°C
20
– 55°C
10 +150°C 10
–5.0 –4.0 –3.0 –2.0 –1.0
ID – VGS, GATE–SOURCE VOLTAGE (VOLTS)
IDSS – VGS, GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
0
0
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
35
30 VDS = 10 V
f = 1.0 MHz
25
TA = – 55°C
+ 25°C
20
15
10
5.0
0
5.0
+150°C
– 55°C
+ 25°C
+150°C
4.0 3.0 2.0 1.0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
0
Figure 3. Forward Transconductance
versus Gate–Source Voltage
100 k
10 k
1.0 k
Yfs Yfs
100
1.0 k
VGS(off) = – 2.3 V =
10
Yos VGS(off) = – 5.7 V =
100
0.01
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
10 120
RDS
96
7.0
72
Cgs
4.0 48
Cgd
1.0
0
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
24
0
0
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBFU310LT1/D J FET Transistor N–Channel 2 SOURCE 3 G ATE MMBFU310LT1 Motorola Preferred Dev ice 1 DRAIN 3 1 2 MAXIMUM RATINGS Ra ting Drain–Source Voltage Gate–Sour ce Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CAS E 318 – 08, STYLE 10 SOT– 23 (TO 236AB) THERMAL CHARACTERISTICS Chara cteristic Total Device Dissipation FR 5 Board(1) TA = 25°C Derate above 25 °C Thermal Resistance, Junction to Amb ient Junction and Storage Temperature S ymbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C DEVICE MARKING MMBFU310LT1 = 6C ELEC TRICAL CHARACTERISTICS (TA = 25°C unle ss otherwise noted) Characteristic Symb ol Min Max Unit OFF CHARACTERISTICS Ga te–Source Breakdown Voltage (IG = – 1.0 µAdc, VDS = 0) Gate 1 Leakage Curr ent (VGS = –15 Vdc, VDS = 0) Gate 2 L eakage Current (VGS = –15 Vdc, VDS = 0, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) V(BR)GSS IG1SS IG2SS V.
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