MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFU310LT1/D
JFET Transistor
N–Channel
2 SOURCE 3 GATE
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBFU310LT1/D
JFET
Transistor
N–Channel
2 SOURCE 3 GATE
MMBFU310LT1
Motorola Preferred Device
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 – 08, STYLE 10 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 – 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBFU310LT1 = 6C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0) Gate 1 Leakage Current (VGS = –15 Vdc, VDS = 0) Gate 2 Leakage Current (VGS = –15 Vdc, VDS = 0, TA = 125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) V(BR)GSS IG1SS IG2SS VGS(off) – 25 — — – 2.5 — – 150 – 150 – 6.0 Vdc pA nAdc Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 10 Vdc, VGS = 0) Gate–Source Forward Voltage (IG = 10 mAdc, VDS = 0) IDSS VGS(f) 24 — 60 1.0 mAdc Vdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f ...
