MMBR4957LT1 High-Frequency Transistor Datasheet

MMBR4957LT1 Datasheet, PDF, Equivalent


Part Number

MMBR4957LT1

Description

PNP Silicon High-Frequency Transistor

Manufacture

Motorola

Total Page 4 Pages
Datasheet
Download MMBR4957LT1 Datasheet


MMBR4957LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR4957LT1/D
The RF Line
PNP Silicon
High-Frequency Transistor
MMBR4957LT1, T3
. . . designed for high–gain, low–noise amplifier oscillator and mixer applica-
tions. Specifically packaged for thick and thin–film circuits using surface mount
components.
High Gain — Gpe = 17 dB Typ @ f = 450 MHz
Low Noise — NF = 3.0 dB Typ @ f = 450 MHz
Available in tape and reel packaging options by adding suffix:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
IC = – 30 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C*
Derate linearly above Tcase = 75°C @
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Storage Temperature
Tstg
Thermal Resistance Junction to Case*
RθJC
* Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
DEVICE MARKING
Value
– 30
– 30
– 3.0
– 30
150
0.278
3.70
Max
– 55 to +150
270
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Unit
°C
°C/W
MMBR4957LT1, T3 = 7F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0)
Collector Cutoff Current (VCB = –10 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain (IC = – 2.0 mAdc, VCE = –10 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
Current–Gain — Bandwidth Product
(IE = – 2.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Common–Emitter Amplifier Power Gain
(VCE = –10 Vdc, IC = – 2.0 mAdc, f = 450 MHz)
Noise Figure (IC = – 2.0 mAdc, VCE = –10 Vdc, f = 450 MHz)
fT
Ccb
Gpe
NF
Min
– 30
– 30
– 3.0
20
CASE 318–07, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Typ
1200
17
3.0
Max
– 0.1
150
0.8
Unit
Vdc
Vdc
Vdc
µAdc
MHz
pF
dB
dB
REV 6
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
MMBR4957LT1, T3
1

MMBR4957LT1
VCE
(Volts)
– 5.0
IC
(mA)
– 5.0
–10
–15
–10 – 5.0
–10
–15
f
MHz
0.1
0.3
0.5
0.7
0.9
1.2
1.5
2.0
2.5
3.0
0.1
0.3
0.5
0.7
0.9
1.2
1.5
2.0
2.5
3.0
0.1
0.3
0.5
0.7
0.9
1.2
1.5
2.0
2.5
3.0
0.1
0.3
0.5
0.7
0.9
1.2
1.5
2.0
2.5
3.0
0.1
0.3
0.5
0.7
0.9
1.2
1.5
2.0
2.5
3.0
0.1
0.3
0.5
0.7
0.9
1.2
1.5
2.0
2.5
3.0
S11
|S11|
φ
0.61 – 37
0.39 – 83
0.30 – 107–
0.26 – 125–
0.24 – 140–
0.24 – 158–
0.23 – 172–
0.23 156
0.25 133
0.29 105
S21
|S21|
φ
9.28 148
5.56 112
3.73 95
2.79 84
2.26 76
1.78 65
1.49 55
1.17 43
0.98 33
0.85 26
S12
|S12|
0.03
0.07
0.09
0.12
0.14
0.17
0.20
0.24
0.29
0.34
0.42 – 55 11.54
0.28 – 108– 5.81
0.25 – 132– 3.72
0.25 – 148– 2.77
0.25 – 162– 2.23
0.26 – 177– 1.74
0.26 170 1.46
0.27 142 1.14
0.30 122 0.95
0.34 97
0.82
138
104
90
81
73
62
54
41
32
26
0.03
0.06
0.08
0.11
0.13
0.16
0.19
0.24
0.29
0.35
0.24 – 90 6.83 129 0.02
0.24 – 136– 3.17 107 0.05
0.27 – 153– 2.23 96 0.08
0.29 – 167– 1.75 86 0.10
0.31 – 178– 1.47 77 0.12
0.32 168 1.20 65 0.15
0.32 155 1.03 56 0.18
0.34 130 0.83 44 0.24
0.36 111 0.71 36 0.31
0.41 89
0.64 31 0.37
0.65 – 33 9.36 149 0.03
0.42 – 73 5.77 114 0.06
0.31 – 95 3.91 98 0.09
0.26 – 111– 2.94 87 0.11
0.24 – 126– 2.39 78 0.14
0.23 – 144– 1.87 67 0.17
0.21 – 159– 1.58 58 0.19
0.20 166 1.24 46 0.23
0.21 141 1.04 35 0.27
0.25 109 0.90 28 0.32
0.49 – 46 12.33
0.30 – 91 6.45
0.25 – 114– 4.19
0.23 – 132– 3.10
0.22 – 147– 2.50
0.23 – 164– 1.96
0.23 – 178– 1.63
0.23 150 1.27
0.25 128 1.06
0.30 101 0.92
141
107
93
83
75
65
57
44
35
27
0.03
0.06
0.08
0.11
0.13
0.16
0.18
0.23
0.28
0.33
0.38 – 57 12.51
0.25 – 107– 5.97
0.23 – 130– 3.84
0.23 – 147– 2.84
0.24 – 161– 2.29
0.26 – 177– 1.80
0.26 170 1.50
0.27 141 1.17
0.29 120 0.97
0.34 96
0.84
135
103
90
81
74
64
55
43
34
27
0.02
0.05
0.08
0.10
0.12
0.15
0.18
0.23
0.28
0.34
Table 1. Common Emitter S–Parameters
φ
72
62
62
62
61
60
60
60
59
58
71
66
67
66
66
65
65
65
64
61
69
70
69
70
70
70
72
71
68
64
74
64
63
63
62
60
60
60
59
59
71
67
67
66
65
64
65
65
64
62
71
69
69
68
67
68
68
69
67
64
S22
|S22|
φ
0.90 – 16
0.69 – 27
0.62 – 30
0.59 – 34
0.58 – 38
0.58 – 45
0.58 – 51
0.56 – 61
0.54 – 72
0.50 – 83
0.84 – 18
0.64 – 25
0.59 – 28
0.58 – 32
0.57 – 37
0.57 – 43
0.57 – 50
0.56 – 60
0.53 – 73
0.50 – 83
0.80 – 12
0.72 – 19
0.69 – 26
0.66 – 32
0.65 – 38
0.64 – 46
0.63 – 53
0.60 – 65
0.57 – 78
0.51 – 90
0.92 – 14
0.72 – 25
0.65 – 29
0.62 – 32
0.61 – 37
0.60 – 43
0.60 – 49
0.58 – 58
0.56 – 69
0.52 – 79
0.87 – 17
0.66 – 24
0.61 – 27
0.59 – 31
0.58 – 35
0.58 – 41
0.58 – 47
0.57 – 57
0.55 – 67
0.51 – 78
0.84 – 17
0.66 – 21
0.63 – 25
0.61 – 29
0.61 – 34
0.60 – 41
0.61 – 47
0.59 – 57
0.57 – 68
0.53 – 79
MMBR4957LT1, T3
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR4957LT1/D T he RF Line PNP Silicon High-Frequency T ransistor . . . designed for high–gai n, low–noise amplifier oscillator and mixer applications. Specifically packa ged for thick and thin–film circuits using surface mount components. • Hig h Gain — Gpe = 17 dB Typ @ f = 450 MH z • Low Noise — NF = 3.0 dB Typ @ f = 450 MHz • Available in tape and re el packaging options by adding suffix: T1 suffix = 3,000 units per reel T3 suf fix = 10,000 units per reel MAXIMUM RAT INGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Bas e Voltage Collector Current — Continu ous Maximum Junction Temperature Power Dissipation, Tcase = 75°C* Derate line arly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value – 30 – 30 – 3.0 – 30 150 0.278 3.70 U nit Vdc Vdc Vdc mAdc °C W mW/°C IC = – 30 mA HIGH–FREQUENCY TRANSISTOR P NP SILICON MMBR4957LT1, T3 THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resista.
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