MMBR5031LT1 High-Frequency Transistor Datasheet

MMBR5031LT1 Datasheet, PDF, Equivalent


Part Number

MMBR5031LT1

Description

NPN Silicon High-Frequency Transistor

Manufacture

Motorola

Total Page 2 Pages
Datasheet
Download MMBR5031LT1 Datasheet


MMBR5031LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR5031LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
MMBR5031LT1
Designed for thick and thin–film circuits using surface mount components
and requiring low–noise, high–gain signal amplification at frequencies to 1.0
GHz.
High Gain — Gpe = 17 dB Typ @ f = 450 MHz
Low Noise — NF = 2.5 dB Typ @ f = 450 MHz
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (1)
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Symbol
Tstg
RθJC
Value
10
15
3.0
20
150
0.300
4.00
Max
– 55 to +150
250
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Unit
°C
°C/W
DEVICE MARKING
MMBR5031LT1 = 7G
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
10
— Vdc
Collector–Base Breakdown Voltage (IC = 0.01 mAdc, IE = 0)
V(BR)CBO
15
— Vdc
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
V(BR)EBO
3.0
— Vdc
Collector Cutoff Current (VCB = 6.0 Vdc, IE = 0)
ICBO
10 nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE 25 — 300 —
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
fT —
Collector–Base Capacitance
(VCE = 6.0 Vdc, IE = 0, f = 0.1 MHz)
Ccb —
Minimum Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) NFmin
Common–Emitter Amplifier Power Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
Gpe —
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
1,000
2.5
17
1.5
25
MHz
pF
dB
dB
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MMBR5031LT1
1

MMBR5031LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
K
J
CASE 318–08
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MMBR5031LT1
2
*MMBR5031LT1/D*MOTOROLA RF DMEMVBICR5E0D31ALTTA1/D


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR5031LT1/D T he RF Line NPN Silicon High-Frequency Transistor Designed for thick and thin film circuits using surface mount com ponents and requiring low–noise, high –gain signal amplification at frequen cies to 1.0 GHz. • High Gain — Gpe = 17 dB Typ @ f = 450 MHz • Low Noise — NF = 2.5 dB Typ @ f = 450 MHz • Available in tape and reel packaging op tions: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Rating Collector–Emi tter Voltage Collector–Base Voltage E mitter–Base Voltage Collector Current — Continuous Maximum Junction Temper ature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(ma x) Value 10 15 3.0 20 150 0.300 4.00 Un it Vdc Vdc Vdc mAdc °C W mW/°C MMBR5 031LT1 RF AMPLIFIER TRANSISTOR NPN SIL ICON THERMAL CHARACTERISTICS Character istic Storage Temperature Thermal Resis tance Junction to Case Symbol Tstg RθJC Max – 55 to +150 250 Unit °C °C/W CASE 318–08, STYL.
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