NPN SILICON. MMBR5179LT1 Datasheet


MMBR5179LT1 SILICON. Datasheet pdf. Equivalent


MMBR5179LT1


RF AMPLIFIER TRANSISTOR NPN SILICON
MOTOROLA
The RF Line

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMBR5179LT1/D

NPN Silicon High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz. Specifically packaged for use in thick and thin–film circuits using surface mount components. • High Gain — Gpe = 15 dB Typ @ f = 200 MHz • Low Noise — NF = 4.5 dB Typ @ f = 200 MHz • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Maximum Junction Temperature Power Dissipation, Tcase = 75°C (1) Derate linearly above Tcase = 75°C @ Symbol VCEO VCBO VEBO IC TJmax PD(max) Value 15 30 3.0 50 150 0.375 5.00 Unit Vdc Vdc Vdc mAdc °C W mW/°C

MMBR5179LT1

RF AMPLIFIER TRANSISTOR NPN SILICON

THERMAL CHARACTERISTICS
Characteristic Storage Temperature Thermal Resistance Junction to Case Symbol Tstg RθJC Max – 55 to +150 200 Unit °C °C/W CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB)

DEVICE MARKING
MMBR5179LT1 = 7H

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VC...



MMBR5179LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR5179LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for small–signal amplification at frequencies to 500 MHz.
Specifically packaged for use in thick and thin–film circuits using surface mount
components.
High Gain — Gpe = 15 dB Typ @ f = 200 MHz
Low Noise — NF = 4.5 dB Typ @ f = 200 MHz
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (1)
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
DEVICE MARKING
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
15
30
3.0
50
150
0.375
5.00
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Symbol
Tstg
RθJC
Max
– 55 to +150
200
Unit
°C
°C/W
MMBR5179LT1 = 7H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current (VCB = 15 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc)
Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz)
50 ohm Noise Figure (IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ,
f = 200 MHz)
fT
Ccb
NF
Common–Emitter Amplifier Power Gain
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz)
Gpe
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
MMBR5179LT1
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Min Typ Max Unit
15 — — Vdc
30 — — Vdc
3.0 —
— Vdc
— — 0.02 µAdc
30 — 250 —
— — 0.4 Vdc
— — 1.0 Vdc
— 1,400 —
MHz
— — 1.0 pF
— 4.5 — dB
— 15 — dB
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MMBR5179LT1
1

MMBR5179LT1
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
KJ
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
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MMBR5179LT1
2
MOTOROLA RF DMEMVBIRC5E17D9ALTA1/D




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