MMBR521LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR521LT1/D The RF Line PNP Silicon High-Frequency Transistor Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. High Current Gain–Bandwidth Product — fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1) fT = 4.2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1) Low Noise Figure @ f = 1.0 GHz — NF(matched) = 2.5 dB (Typ) (MMBR521LT1) NF(matched) = 2.8 dB (Typ) (MRF5211LT1) High Power Gain — Gpe (matched) = 11 dB (Typ) Guaranteed RF Parameters Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1) Offer Improved RF Performance Lower Package Parasitics Higher Gain Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Ratings Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C, Derate linearly above TC = 75°C @ Collector Current — Continuous Maximum Junction Temperature Storage Temperature All All IC TJmax Tstg Symbol VCEO VCBO VEBO PD(max) Value –10 – 20 – 2.5 0.333 4.44 – 70 150 – 55 to +150 Unit Vdc Vdc Vdc W mW/°C mA °C °C MMBR521LT1 MRF5211LT1 IC = – 70 mA HIGH–FREQUENCY TRANSISTOR PNP SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) MMBR521LT1 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF5211LT1 THERMAL CHARACTERISTICS Ratings Thermal Resistance, Junction to Case (MMBR521LT1, MRF5211L...