PNP SILICON. MMBR521LT1 Datasheet


MMBR521LT1 SILICON. Datasheet pdf. Equivalent


Part Number

MMBR521LT1

Description

HIGH-FREQUENCY TRANSISTOR PNP SILICON

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBR521LT1 Datasheet


MMBR521LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
PNP Silicon
High-Frequency Transistor
Designed primarily for use in the high–gain, low–noise small–signal
amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
switching times.
High Current Gain–Bandwidth Product —
fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1)
fT = 4.2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1)
Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 2.5 dB (Typ) (MMBR521LT1)
NF(matched) = 2.8 dB (Typ) (MRF5211LT1)
High Power Gain — Gpe (matched) = 11 dB (Typ)
Guaranteed RF Parameters
Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1)
Offer Improved RF Performance
Lower Package Parasitics
Higher Gain
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Ratings
Symbol Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C,
Derate linearly above TC = 75°C @
Collector Current — Continuous
Maximum Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
All
All
VCEO
VCBO
VEBO
PD(max)
–10
– 20
– 2.5
0.333
4.44
Vdc
Vdc
Vdc
W
mW/°C
IC
TJmax
Tstg
– 70
150
– 55 to +150
mA
°C
°C
Ratings
Symbol Value
Unit
Thermal Resistance, Junction to Case
(MMBR521LT1, MRF5211LT1)
RθJC
225 °C/W
DEVICE MARKING
MMBR521LT1 = 7M
MRF5211LT1 = 04
NOTE:
1. Case Temperature is measured on the collector lead closest to the package. For case
temperatures above + 75°C: PDISP(max) = (TJmax – TC) / RθJC
Order this document
by MMBR521LT1/D
MMBR521LT1
MRF5211LT1
IC = – 70 mA
HIGH–FREQUENCY
TRANSISTOR
PNP SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
MMBR521LT1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5211LT1
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MMBR521LT1 MRF5211LT1
1

MMBR521LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = – 0.1 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = – 50 µAdc, IC = 0)
Collector Cutoff Current (VCB = – 8.0 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
–10
– 20
– 2.5
–12
— Vdc
— Vdc
— Vdc
–10 µAdc
DC Current Gain (IC = – 30 mAdc, VCE = – 5.0 Vdc)
DYNAMIC CHARACTERISTICS
hFE 25
— 125 —
Collector–Base Capacitance (VCB = – 6.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
1.0
1.5
pF
Current Gain — Bandwidth Product
(VCE = – 8.0 V, IC = – 35 mA, f = 1.0 GHz)
(VCE = – 8.0 V, IC = – 50 mA, f = 1.0 GHz)
MMBR521LT1
MRF5211LT1
fT GHz
— 3.4 —
— 4.2 —
FUNCTIONAL TESTS
Power Gain at Minimum Noise Figure
GNFmin
dB
(VCE = – 6.0 V, IC = – 5.0 mA, f = 500 MHz) MMBR521LT1
13 15 —
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
MMBR521LT1
8.0 10
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
MRF5211LT1
10 11 —
Noise Figure — Minimum
(VCE = – 6.0 V, IC = – 5.0 mA, f = 500 MHz)
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
(VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz)
MMBR521LT1
MMBR521LT1
MRF5211LT1
NFmin
1.5 2.5
2.5 3.5
2.8 3.5
dB
TYPICAL CHARACTERISTICS
3
4
2
1
f = 1 MHz
Cob
Ccb
0
0 – 1 – 2 – 3 – 4 – 5 – 6 – 7 – 8 – 9 –10
VCB, COLLECTOR–BASE VOLTAGE (VOLTS)
Figure 1. Junction Capacitance versus Voltage
3
2
1 f = 1 MHz
00 –1 –2 –3
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 2. Input Capacitance versus Voltage
RF INPUT
VBE
*BIAS **SLUG TUNER
TEE
D.U.T.
VCE = – 6 Vdc
**SLUG TUNER *BIAS
TEE
*MICROLAB
*HW–XXN
*AS APPLICABLE
RF OUTPUT
Figure 3. Functional Circuit Schematic
**MICROLAB/FXR
**SF — 11N < 1 GHz
**SF — 311N 1 GHz
MMBR521LT1 MRF5211LT1
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR521LT1/D Th e RF Line PNP Silicon High-Frequency T ransistor Designed primarily for use in the high–gain, low–noise small–s ignal amplifiers for operation up to 3. 5 GHz. Also usable in applications requ iring fast switching times. • High Cu rrent Gain–Bandwidth Product — fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR 521LT1) fT = 4.2 GHz (Typ) @ IC = – 5 0 mAdc (MRF5211LT1) • Low Noise Figur e @ f = 1.0 GHz — NF(matched) = 2.5 d B (Typ) (MMBR521LT1) NF(matched) = 2.8 dB (Typ) (MRF5211LT1) • High Power Ga in — Gpe (matched) = 11 dB (Typ) • Guaranteed RF Parameters • Surface Mo unted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1) Offer Improved RF Perform ance Lower Package Parasitics Higher Ga in • Available in tape and reel packa ging options: T1 suffix = 3,000 units p er reel MAXIMUM RATINGS Ratings Collect or–Emitter Voltage Collector–Base V oltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C, Derate linearly above TC = 75°C @ Collec.
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