MMBR911 High-Frequency Transistor Datasheet

MMBR911 Datasheet, PDF, Equivalent


Part Number

MMBR911

Description

NPN Silicon High-Frequency Transistor

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MMBR911 Datasheet


MMBR911
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic package. This
Motorola small–signal plastic transistor offers superior quality and performance
at low cost.
High Gain–Bandwidth Product
fT = 7.0 GHz (Typ) @ 30 mA
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
High Gain
GNF = 17 dB (Typ) @ 10 mA/500 MHz
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR911LT1/D
MMBR911LT1
IC = 60 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Power Dissipation @ Tcase = 75°C (1)
Derate linearly above Tcase = 75°C
Storage Temperature
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
Tstg
TJmax
Symbol
RθJC
DEVICE MARKING
MMBR911LT1 = 7P
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Value
12
20
2.0
60
333
4.44
– 55 to +150
150
Value
225
Unit
Vdc
Vdc
Vdc
mA
mW
mW/°C
°C
°C
Unit
°C/W
REV 8
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MMBR911LT1
1

MMBR911
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = 0.1 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
ICBO
ON CHARACTERISTICS
DC Current Gain
(IC = 30 mAdc, VCE = 10 Vdc)
hFE
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
Current Gain–Bandwidth Product
(VCE = 10 Vdc, IC = 30 mAdc, f = 1.0 GHz)
fT
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
f = 0.5 GHz
f = 1.0 GHz
GNF
Noise Figure
(IC = 10 mAdc, VCE = 10 Vdc)
f = 0.5 GHz
f = 1.0 GHz
NF
Min
12
20
2.0
30
Typ
6.0
17
11
2.0
2.9
10
8
6
4
2 VCE = 10 V
f = 1 GHz
0
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 1. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
Max Unit
— Vdc
— Vdc
— Vdc
50 nAdc
200 —
1.0 pF
— GHz
dB
dB
MMBR911LT1
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR911LT1/D Th e RF Line NPN Silicon High-Frequency T ransistor Designed for low noise, wide dynamic range front–end amplifiers an d low–noise VCO’s. Available in a s urface–mountable plastic package. Thi s Motorola small–signal plastic trans istor offers superior quality and perfo rmance at low cost. • High Gain–Ban dwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.7 dB (Ty p) @ 500 MHz • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz • State–of– the–Art Technology Fine Line Geometry Ion–Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nit ride Passivation • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MMBR911LT1 IC = 60 mA LOW NOISE HIGH–FREQUENCY TRANSI STOR NPN SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MAXIMUM RATINGS Rating Collector–Emitter Voltage Col lector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Power Dissipation @ Tcase = 7.
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