MMBR941LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure 9 Finger, 1.25 Micron Geometry with Gold Top Metal Gold Sintered Back Metal Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel IC = 50 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS MMBR941 MRF947 MRF9411 SERIES CASE 318–08, STYLE 6 SOT–23 LOW PROFILE MMBR941LT1, T3, MMBR941BLT1 CASE 419–02, STYLE 3 MRF947AT1, MRF947BT1, MRF947T1, T3 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF9411LT1 REV 9 MOTOROLA RF DEVICE DATA © Motorola, Inc. 1997 MMBR941 MRF947 MRF9411 SERIES 2–1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC MMBR941LT1, T3 10 20 1.5 0.25 3.33 50 150 – 55 to +150 300 MRF9411LT1 10 20 1.5 0.25 3.33 50 150 – 55 to +150 300 MRF947 Series 10 20 1.5 0.188 2.5 50 150 – 55 to +150 400 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKING MMBR941LT1 = 7Y MRF9411LT1 = 10 MMBR941BLT1 = 7N MRF9...