High-Frequency Transistors. MMBR951ALT1 Datasheet


MMBR951ALT1 Transistors. Datasheet pdf. Equivalent


Part Number

MMBR951ALT1

Description

NPN Silicon Low Noise / High-Frequency Transistors

Manufacture

Motorola

Total Page 16 Pages
Datasheet
Download MMBR951ALT1 Datasheet


MMBR951ALT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
Low Noise, High-Frequency
Transistors
Designed for use in high gain, low noise small–signal amplifiers. This series
features excellent broadband linearity and is offered in a variety of packages.
Fully Implanted Base and Emitter Structure
18 Finger, 1.25 Micron Geometry with Gold Top Metal
Gold Sintered Back Metal
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
Order this document
by MMBR951ALT1/D
MMBR951
MRF957
MRF9511
SERIES
IC = 100 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR951LT1, MMBR951ALT1
CASE 419–02, STYLE 3
MRF957T1
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF9511LT1
REV 9
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MMBR951 MRF957 MRF9511 SERIES
1

MMBR951ALT1
MAXIMUM RATINGS
Rating
Symbol
MMBR951LT1
MMBR951ALT1
MRF9511LT1
MRF957T1
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Power Dissipation (1) TC = 75°C
Derate linearly above Tcase = 75°C @
Collector Current — Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
DEVICE MARKING
VCEO
VCBO
VEBO
PD(max)
IC
TJmax
Tstg
RθJC
10
20
1.5
0.322
4.29
100
150
– 55 to +150
233
10
20
1.5
0.322
4.29
100
150
– 55 to +150
233
10
20
15
0.227
3.03
100
150
– 55 to +150
330
Vdc
Vdc
Vdc
Watts
mW/°C
mA
°C
°C
°C/W
MRF9511LT1 = 11
MMBR951ALT1 = AAG
MMBR951LT1 = 7Z
MRF957T1 = B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (3)
Collector–Emitter Breakdown Voltage
(IC = 0.1 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
Emitter Cutoff Current
(VEB = 1.0 V, IC = 0)
Collector Cutoff Current
(VCB = 10 V, IE = 0)
V(BR)CEO 10
V(BR)CBO 20
IEBO
ICBO
13 —
Vdc
25 —
Vdc
— 0.1 µAdc
— 0.1 µAdc
ON CHARACTERISTICS (3)
DC Current Gain
(VCE = 6.0 V, IC = 5.0 mA)
(VCE = 6.0 V, IC = 5.0 mA)
All
MMBR951ALT1
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Current Gain — Bandwidth Product
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
MRF9511LT1, MMBR951LT1, MMBR951ALT1
MRF957T1
hFE
Ccb
fT
50 — 200
75 — 150
— 0.45 1.0
pF
— 8.0 —
— 9.0 —
GHz
NOTES:
1. To calculate the junction temperature use TJ = (PD x RθJA) + TCASE. Case temperature measured on collector lead immediately adjacent
to body of package.
2. IC — Continuous (MTBF 10 years).
3. Pulse width 300 µs, duty cycle 2% pulsed.
MMBR951 MRF957 MRF9511 SERIES
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR951ALT1/D T he RF Line NPN Silicon Low Noise, High- Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excell ent broadband linearity and is offered in a variety of packages. • Fully Imp lanted Base and Emitter Structure • 1 8 Finger, 1.25 Micron Geometry with Gol d Top Metal • Gold Sintered Back Meta l • Available in tape and reel packag ing options: T1 suffix = 3,000 units pe r reel MMBR951 MRF957 MRF9511 SERIES IC = 100 mA LOW NOISE HIGH–FREQUENCY TRANSISTORS CASE 318–08, STYLE 6 SOT –23 LOW PROFILE MMBR951LT1, MMBR951AL T1 CASE 419–02, STYLE 3 MRF957T1 CA SE 318A–05, STYLE 1 SOT–143 LOW PRO FILE MRF9511LT1 REV 9 MOTOROLA RF DEV ICE DATA © Motorola, Inc. 1997 MMBR95 1 MRF957 MRF9511 SERIES 1 MAXIMUM RATI NGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above Tcase = 75°C @ Collector Curr.
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