MMBT100

PN100/PN100A/MMBT100/MMBT100A — NPN General Purpose Amplifier PN100/PN100A/MMBT100/MMBT100A NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10. October 2008 1 TO-92 1. Emitter 2. Base 3. Collector Mark: PN100/PN100A C E B SOT-23 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature Ratings - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Thermal Characteristics ...