MMBT100A Purpose Amplifier Datasheet

MMBT100A Datasheet, PDF, Equivalent


Part Number

MMBT100A

Description

NPN General Purpose Amplifier

Manufacture

Fairchild

Total Page 7 Pages
Datasheet
Download MMBT100A Datasheet


MMBT100A
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier applications at collector currents to 300mA.
• Sourced from process 10.
October 2008
1 TO-92
1. Emitter 2. Base 3. Collector
Mark: PN100/PN100A
C
E
B SOT-23
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
VCEO
VCBO
VEBO
IC
TJ, Tstg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
Ratings
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
* Pulse Test: Pulse Width300μs, Duty Cycle2%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
PN100
PN100A
625
5.0
83.3
200
Max.
*MMBT100
*MMBT100A
350
2.8
357
Units
45
75
6.0
500
-55 ~ +150
Units
mW
mW/°C
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
1
www.fairchildsemi.com

MMBT100A
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage *
BVEBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Base Cutoff Current
ICES
Collector-Emiitter Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics
IC = 10μA, IE = 0
IC = 1mA, IB = 0
IE = 10μA, IC = 0
VCB = 60V
VCE = 40V
VEB = 4V
hFE DC Current Gain
IC = 100μA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V*
IC = 150mA, VCE = 5.0V *
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Small Signal Characteristics
fT
Cobo
NF
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
* Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%
IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA
IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA
VCE = 20V, IC = 20mA
VCB = 5.0V, f = 1.0MHz
IC = 100μA, VCE = 5.0V
RG = 2.0kΩ, f = 1.0KHz
100
100A
100
100A
100
100A
100
100A
Min. Max. Units
75 V
45 V
6.0 V
50 nA
50 nA
50 nA
80
240
100 450
300 600
100
100 350
100
0.2
0.4
0.85
1.0
V
V
V
V
250 MHz
4.5 pF
5.0 dB
4.0 dB
© 2008 Fairchild Semiconductor Corporation
PN100/PN100A/MMBT100/MMBT100A Rev. C1
2
www.fairchildsemi.com


Features PN100/PN100A/MMBT100/MMBT100A — NPN Ge neral Purpose Amplifier PN100/PN100A/M MBT100/MMBT100A NPN General Purpose Amp lifier • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sou rced from process 10. October 2008 1 TO-92 1. Emitter 2. Base 3. Collector M ark: PN100/PN100A C E B SOT-23 Absolu te Maximum Ratings* Ta = 25°C unless o therwise noted Symbol VCEO VCBO VEBO I C TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter -Base Voltage Collector current Junctio n and Storage Temperature Ratings - Co ntinuous * These ratings are limiting values above which the serviceability o f any semiconductor device may be impai red. NOTES: 1. These ratings are based on a maximum junction temperature of 15 0 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or lo w duty cycle operations. * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Thermal Characteristics .
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