MMBT1010T1 SURFACE MOUNT Datasheet

MMBT1010T1 Datasheet, PDF, Equivalent


Part Number

MMBT1010T1

Description

PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBT1010T1 Datasheet


MMBT1010T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT1010LT1/D
Low Saturation Voltage
PNP Silicon Driver Transistors
MMBT1010LT1
MSD1010T1
Motorola Preferred Devices
Part of the GreenLinePortfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy
in general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount
applications.
Low VCE(sat), < 0.1 V at 50 mA
Applications
LCD Backlight Driver
Annunciator Driver
General Output Device Driver
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
DEVICE MARKING
MMBT1010LT1 = GLP
MSD1010T1 = GLP
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
45
15
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
3
1
2
CASE 318–08, STYLE 6
SOT-23
2
1
3
CASE 318D–04, STYLE 1
SC-59
Rating
Power Dissipation
TA = 25°C
Derate above 25°C
Symbol
PD(1)
Max Unit
250 mW
1.8 mW/°C
COLLECTOR
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS
RθJA
TJ
Tstg
556
150
– 55 ~ + 150
°C/W
°C
°C
BASE
EMITTER
Characteristic
Symbol
Condition
Min Max Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA, IB = 0
15 — Vdc
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 µA, IE = 0
5.0 — Vdc
Collector-Base Cutoff Current
ICBO
VCB = 20 V, IE = 0
— 0.1 µA
Collector-Emitter Cutoff Current
ICEO
VCE = 10 V, IB = 0
DC Current Gain
hFE1(2)
VCE = 5 V, IC = 100 mA
300
Collector-Emitter Saturation Voltage
VCE(sat)(2)
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 100 mA, IB = 10 mA
Base-Emitter Saturation Voltage
VBE(sat)(2) IC = 100 mA, IB = 10 mA
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width 300 µs, D.C. 2%.
GreenLine is a trademark of Motorola, Inc .Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
100
600
0.1
0.1
0.19
1.1
µA
Vdc
Vdc
REV 2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1

MMBT1010T1
MMBT1010LT1 MSD1010T1
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.037
0.95
0.037
0.95
0.039
1.0
0.031
0.8
0.098-0.118
2.5-3.0
0.094
2.4
inches
mm
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
SC–59
SOT–23
SC-59/SOT-23 POWER DISSIPATION
The power dissipation of the SC-59/SOT-23 is a function of
the drain pad size. This can vary from the minimum pad size
for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction tempera-
ture of the die, RθJA, the thermal resistance from the device
junction to ambient; and the operating temperature, TA.
Using the values provided on the data sheet, PD can be
calculated as follows.
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 225 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad. Using a board material such as
Thermal Clad, the power dissipation can be doubled using
the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient should be 5°C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT1010LT1/ D Low Saturation Voltage PNP Silicon D river Transistors Part of the GreenLine ™ Portfolio of devices with energy– conserving traits. This PNP Silicon Epi taxial Planar Transistor is designed to conserve energy in general purpose dri ver applications. This device is housed in the SOT-23 and SC–59 packages whi ch are designed for low power surface m ount applications. • Low VCE(sat), < 0.1 V at 50 mA Applications • LCD Bac klight Driver • Annunciator Driver General Output Device Driver MAXIMUM RATINGS (TA = 25°C) Rating Collector-B ase Voltage Collector-Emitter Voltage E mitter-Base Voltage Collector Current Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.0 100 Unit Vd c Vdc Vdc mAdc MMBT1010LT1 MSD1010T1 M otorola Preferred Devices PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUN T 3 1 2 CASE 318–08, STYLE 6 SOT-23 3 2 1 DEVICE MARKING MMBT1010LT1 = GLP MSD1010T1 = GLP CASE 318D–04, STYLE 1 SC-.
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