Purpose Amplifier. MMBT200A Datasheet


MMBT200A Amplifier. Datasheet pdf. Equivalent


Part Number

MMBT200A

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 4 Pages
Datasheet
Download MMBT200A Datasheet


MMBT200A
Discrete POWER & Signal
Technologies
PN200
PN200A
MMBT200
MMBT200A
C
C
BE
TO-92
SOT-23
Mark: N2 / N2A
B
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 68.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN200A
625
5.0
83.3
200
*MMBT200A
350
2.8
357
Units
mW
mW /°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

MMBT200A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage*
BVEBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 µA, IB = 0
IC = 1.0 mA, IE = 0
IE = 10 µA, IC = 0
VCB = 50 V, IE = 0
VCE = 40 V, IE = 10
VEB = 4.0 V, IC = 0
60 V
45 V
6.0 V
50 nA
50 nA
50 nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 100 µA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V*
IC = 150 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
200
200A
200
200A
200A
200
200A
80
240
100
300
100
100
100
SMALL SIGNAL CHARACTERISTICS
fT
Cobo
NF
Current Gain - Bandwidth Product
Output Capacitance
Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCE = 20 V, IC = 20 mA
VCB = 10 V, f = 1.0 MHz
IC = 100 µA, VCE = 5.0 V,
RG = 2.0 k, f = 1.0 kHz
200
200A
250
450
600
350
0.2
0.4
0.85
1.0
V
V
V
V
MHz
6.0 pF
5.0 dB
4.0 dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
400 125 °C
VCE = 5V
300
25 °C
200
100 - 40 °C
0
0.01
0.1 1 10 100
IC - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
0.25
0.2
β = 10
0.15
0.1
25 °C
0.05
0
0.1
125 ºC
- 40 ºC
1 10 100
I C - COLLECTOR CURRENT (mA)
P 68
300


Features PN200 / MMBT200 / PN200A / MMBT200A Dis crete POWER & Signal Technologies PN20 0 PN200A MMBT200 MMBT200A C E C B TO -92 E SOT-23 Mark: N2 / N2A B PNP Ge neral Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 3 00 mA. Sourced from Process 68. Absolu te Maximum Ratings* Symbol VCEO VCBO VE BO IC TJ, Tstg Collector-Base Voltage E mitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwis e noted Parameter Collector-Emitter Vo ltage Value 45 75 6.0 500 -55 to +150 Units V V V mA °C Operating and Stor age Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconducto r device may be impaired. NOTES: 1) The se ratings are based on a maximum junct ion temperature of 150 degrees C. 2) Th ese are steady state limits. The factor y should be consulted on applications i nvolving pulsed or low duty cycle opera tions. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C un.
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