MMBT2131T3 Purpose Transistors Datasheet

MMBT2131T3 Datasheet, PDF, Equivalent


Part Number

MMBT2131T3

Description

General Purpose Transistors

Manufacture

ON

Total Page 4 Pages
Datasheet
Download MMBT2131T3 Datasheet


MMBT2131T3
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2131T1/D
Product Preview
General Purpose Transistors
MMBT2131T1
MMBT2131T3
PNP Bipolar Junction Transistor
(Complementary NPN Device: MMBT2132T1/T3)
NOTE: Voltage and Current are negative for the PNP Transistor.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
Operating and Storage Temperature Range
VCEO
VCBO
VEBO
IC
IB
PD
PD
RqJA
PD
PD
RqJA
TJ, Tstg
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
PNP
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
Vdc
40 — —
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
Vdc
30 — —
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
V(BR)EBO
Vdc
5.0 — —
ICBO
mAdc
— — 1.0
— — 10
IEBO
mAdc
— — 10
ON CHARACTERISTICS
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
hFE
150 —
Vdc
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Vdc
— 0.25
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VCE(sat)
Vdc
— 0.4
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
VBE(sat)
Vdc
— 1.1
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
VBE(on)
Vdc
— 1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2square FR–4 Board (1sq. 2 oz Cu 0.06thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
3–1

MMBT2131T3
MMBT2131T1 MMBT2131T3
0.5
0.4
0.3
0.7 A
0.2
0.5 A
0.1
10 mA
IC = 1.0 mA
0
0.000001 0.00001 0.0001
0.1 A
0.001
IB, BASE CURRENT (A)
0.01
Figure 1. Collector Saturation Region
0.1
0.2
0.5 A
0.15
0.1
0.1 A
0.05 10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.001
IB, BASE CURRENT (A)
0.01
Figure 2. Collector Saturation Region
0.1
1000
100
0.01
VCE = 3.0 V
1.0
VBE(sat)
150°C
25°C
–40°C
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.1
VCE(sat)
0.01
1.0 0.001
0.01
IC/IB = 10
0.1 1.0
IC, COLLECTOR CURRENT (A)
Figure 4. “ON” Voltages
1.0
0.1
0.01
0.001
VBE(sat)
VCE(sat)
IC/IB = 100
0.01 0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 5. “ON” Voltages
0.16
IC/IB = 10
0.12
0.08
T = 85°C
25°C
0°C
0.04
0
0.01
0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 6. Collector–Emitter Saturation Voltage
3–2 Motorola Bipolar Power Transistor Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2131T1/D Pr oduct Preview General Purpose Transist ors PNP Bipolar Junction Transistor (Co mplementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Ra ting Collector–Emitter Voltage Collec tor–Base Voltage Emitter–Base Volta ge Collector Current Base Current Total Power Dissipation @ TC = 25°C Total P ower Dissipation @ TC = 85°C Thermal R esistance — Junction to Ambient (1) T otal Power Dissipation @ TC = 25°C Tot al Power Dissipation @ TC = 85°C Therm al Resistance — Junction to Ambient ( 2) Operating and Storage Temperature Ra nge Symbol VCEO VCBO VEBO IC IB PD PD R qJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W m W mW °C/W °C MMBT2131T1 MMBT2131T3 0 .7 AMPERES 30 VOLTS — V(BR)CEO 342 mW 6 5 4 1 2 3 CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead COLLECTOR PINS 2, 5 BASE P.
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