Purpose Transistors. MMBT2132T1 Datasheet


MMBT2132T1 Transistors. Datasheet pdf. Equivalent


MMBT2132T1


General Purpose Transistors
MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C

MMBT2132T1 MMBT2132T3
0.7 AMPERES 30 VOLTS — V(BR)CEO 342 mW
6

5

4

1

2

3

CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead

COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3

NPN
Symbol Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic

OFF CHARACTERISTICS
Collector – Base Breakdown Voltage (IC = 100 mAdc) Collector – Emitter Breakdown Voltage (IC = 10 mAdc) Emitter–Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) V(BR)CBO 40 V(BR)CEO 30...



MMBT2132T1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2132T1/D
Product Preview
General Purpose Transistors
NPN Bipolar Junction Transistor
(Complementary PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
VCBO
VEBO
IC
Base Current
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
IB
PD
PD
RqJA
PD
PD
RqJA
Operating and Storage Temperature Range
TJ, Tstg
Value
30
40
5.0
700
350
342
178
366
665
346
188
– 55 to +150
Unit
V
V
V
mA
mA
mW
mW
°C/W
mW
mW
°C/W
°C
MMBT2132T1
MMBT2132T3
0.7 AMPERES
30 VOLTS — V(BR)CEO
342 mW
65
4
1
23
CASE 318 F– 02, STYLE 2
SC–59 — 6 Lead
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
NPN
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter–Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
ON CHARACTERISTICS
V(BR)CBO
Vdc
40 — —
V(BR)CEO
Vdc
30 — —
V(BR)EBO
Vdc
5.0 — —
ICBO
mAdc
— — 1.0
— — 10
IEBO
mAdc
— — 10
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Collector – Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Base–Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
Collector–Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
hFE
150 —
Vdc
VCE(sat)
Vdc
— 0.25
VCE(sat)
Vdc
— 0.4
VBE(sat)
Vdc
— 1.1
VBE(on)
Vdc
— 1.0
1. Minimum FR–4 or G–10 PCB, Operating to Steady State.
2. Mounted onto a 2square FR–4 Board (1sq. 2 oz Cu 0.06thick single sided), Operating to Steady State.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
3–1

MMBT2132T1
MMBT2132T1 MMBT2132T3
0.3
0.1
0.7 A
0.2
0.5 A
0.1
10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.1 A
0.001
IB, BASE CURRENT (A)
0.01
Figure 1. Collector Saturation Region
0.1
10 mA
0.1 A
IC = 1.0 mA
0
0.000001 0.00001 0.0001
0.001
IB, BASE CURRENT (A)
0.01
Figure 2. Collector Saturation Region
0.1
1000
100
0.01
25°C
150°C
–40°C
VCE = 3.0 V
1.0
0.1
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.001
1.0 0.001
VBE(sat)
VCE(sat)
IC/IB = 10
0.01 0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 4. “ON” Voltages
1.0
0.1
0.01
0.001
VBE(sat)
VCE(sat)
IC/IB = 100
0.01 0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 5. “ON” Voltages
0.16
IC/IB = 10
0.12
0.08
T = 85°C
25°C
0°C
0.04
0
0.01
0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 6. Collector–Emitter Saturation Voltage
3–2 Motorola Bipolar Power Transistor Device Data




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