MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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General Purpose Transistor...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT2132T1/D
Product Preview
General Purpose
Transistors
NPN Bipolar Junction
Transistor
(Complementary
PNP Device: MMBT2131T1/T3)
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance — Junction to Ambient (2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 – 55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C
MMBT2132T1 MMBT2132T3
0.7 AMPERES 30 VOLTS — V(BR)CEO 342 mW
6
5
4
1
2
3
CASE 318 F– 02, STYLE 2 SC–59 — 6 Lead
COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3
NPN
Symbol Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Base Breakdown Voltage (IC = 100 mAdc) Collector – Emitter Breakdown Voltage (IC = 10 mAdc) Emitter–Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) V(BR)CBO 40 V(BR)CEO 30 V(BR)EBO 5.0 ICBO — — IEBO — — 10 — — 1.0 10 — — — — Vdc — — Vdc Vdc
mAdc
mAdc
ON CHARACTERISTIC...