Purpose Transistors. MMBT2132T3 Datasheet


MMBT2132T3 Transistors. Datasheet pdf. Equivalent


MMBT2132T3


General Purpose Transistors
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MMBT2132T3 General Purpose Transistors
NPN Bipolar Junction Transistor
Features http://onsemi.com

• Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 85°C Thermal Resistance, Junction−to−Ambient (Note 2) Operating and Storage Temperature Range Symbol VCEO VCBO VEBO IC IB PD PD RqJA PD PD RqJA TJ, Tstg Value 30 40 5.0 700 350 342 178 366 665 346 188 −55 to +150 Unit V V V mA mA mW mW °C/W mW mW °C/W °C

0.7 AMPS 30 VOLTS − V(BR)CEO 342 mW
COLLECTOR PINS 2, 5 BASE PIN 6 EMITTER PIN 3

6 1

TSOP−6/SC−74 CASE 318F STYLE 2

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Minimum FR−4 or G−10 PCB, Operating to Steady State. 2. Mounted onto a 2″ square FR−4 Board (1″ sq 2 oz Cu 0.06″ thick single sided), Operating to Steady State.

MARKING DIAGRAM

DC M G G ...



MMBT2132T3
www.DataSheet4U.com
MMBT2132T3
General Purpose
Transistors
NPN Bipolar Junction Transistor
Features
Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage
VCEO
30
V
Collector−Base Voltage
VCBO
40
V
Emitter−Base Voltage
VEBO
5.0
V
Collector Current
IC 700 mA
Base Current
IB 350 mA
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
PD
PD
RqJA
342 mW
178 mW
366 °C/W
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
PD
PD
RqJA
665 mW
346 mW
188 °C/W
Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR−4 or G−10 PCB, Operating to Steady State.
2. Mounted onto a 2square FR−4 Board (1sq 2 oz Cu 0.06thick single sided),
Operating to Steady State.
http://onsemi.com
0.7 AMPS
30 VOLTS − V(BR)CEO
342 mW
BASE
PIN 6
COLLECTOR
PINS 2, 5
EMITTER
PIN 3
6
1
TSOP−6/SC−74
CASE 318F
STYLE 2
MARKING DIAGRAM
DC M G
G
1
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
DC = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2132T3 TSOP−6 10,000/Tape & Reel
MMBT2132T3G TSOP−6 10,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
MMBT2132T3/D

MMBT2132T3
MMBT2132T3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
Emitter Cutoff Current
ON CHARACTERISTICS
(VEB = 5.0 Vdc, IC = 0 Adc)
DC Current Gain
Collector −Emitter Saturation Voltage
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Collector−Emitter Saturation Voltage
(VCE = 3.0 Vdc, IC = 100 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 700 mAdc, IB = 70 mAdc)
(IC = 700 mAdc, IB = 70 mAdc)
(IC = 700 mAdc, VCE = 1.0 Vdc)
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VCE(sat)
VBE(sat)
VBE(on)
Min Typ Max
40 −
30 −
5.0 −
− − 1.0
− − 10
− − 10
150 −
− − 0.25
− − 0.4
− − 1.1
− − 1.0
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
0.3 0.1
0.7 A
0.2
0.5 A
0.1
10 mA
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.1 A
0.001
IB, BASE CURRENT (A)
0.01
Figure 1. Collector Saturation Region
0.1
10 mA
0.1 A
IC = 1.0 mA
0
0.000001 0.00001
0.0001
0.001
IB, BASE CURRENT (A)
0.01
Figure 2. Collector Saturation Region
0.1
1000
100
0.01
25°C
150°C
−40°C
VCE = 3.0 V
1.0
0.1
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.001
1.0 0.001
VBE(sat)
VCE(sat)
IC/IB = 10
0.01 0.1
IC, COLLECTOR CURRENT (A)
1.0
Figure 4. “ON” Voltages
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