MMBT2222A Transistor NPN Datasheet

MMBT2222A Datasheet, PDF, Equivalent


Part Number

MMBT2222A

Description

Small Signal Transistor (NPN)

Manufacture

General

Total Page 3 Pages
Datasheet
Download MMBT2222A Datasheet


MMBT2222A
MMBT2222A
Small Signal Transistor (NPN)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
New Product
Mounting Pad Layout
0.037 (0.95)
0.037 (0.95)
12
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.035 (0.9)
0.079 (2.0)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
0.031 (0.8)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1P
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)
Features
• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• This transistor is also available in the TO-92 case
with the type designation MPS2222A.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters
Symbols
Value
Units
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO 6.0 V
Collector Current
Power Dissipation
on FR-5 Board(1) TA = 25°C
Derate above 25°C
IC
Ptot
600 mA
225 mW
1.8 mW/°C
Power Dissipation
on Alumina Substrate(2) TA = 25°C
Derate above 25°C
Ptot
300 mW
2.4 mW/°C
Thermal Resistance Junction
to Ambient Air
FR-5 Board
Alumina Substrate
RΘJA
556
417
°C/W
Junction Temperature
Storage Temperature Range
Tj 150 °C
TS
– 55 to +150
°C
Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2/28/00

MMBT2222A
MMBT2222A
Small Signal Transistor (NPN)
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DC Current Gain
VCE = 10 V, IC = 0.1 mA
35
VCE = 10 V, IC = 1 mA
50
VCE = 10 V, IC = 10 mA
75
hFE VCE = 10 V, IC = 10 mA
TA = -55°C
35
VCE = 10 V, IC = 150 mA(1) 100 300
VCE = 10 V, IC = 500 mA(1)
40
VCE = 1.0 V, IC = 150 mA(1) 50 — —
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 10 µA, IE = 0
75 — — V
Collector-Emitter Breakdown Voltage(1)
V(BR)CEO
IC = 10 mA, IB = 0
40 — — V
Emitter-Base Breakdown Voltage
V(BR)EBO
IC = 10 µA, IC = 0
6.0 — — V
Collector-Emitter Saturation Voltage(1)
VCEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.3
1.0
V
Base-Emitter Saturation Voltage(1)
VBEsat
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
0.6
1.2
2.0
V
Collector Cut-off Current
ICEX
VEB = 3 V, VCE = 60 V
10 nA
Collector Cut-off Current
VCB = 60 V, IE = 0
— — 10 nA
ICBO
VCB = 50 V, IE = 0 V
TA = 125°C
10 µA
Base Cut-off Current
IBL VEB = 3 V, VCE = 60 V — — 20 nA
Emitter Cut-off Current
IEBO
VEB = 3 VDC, IC = 0
100 nA
Current Gain-Bandwidth Product
fT
VCE = 20 V, IC = 20 mA
f = 100 MHz
300
MHz
Output Capacitance
Cobo VCB = 10 V, f = 1 MHz, IE = 0
8
pF
Input Capacitance
Cibo VEB = 0.5 V, f = 1 MHz, IC = 0 — — 25 pF
Noise Figure
NF
VCE = 10 V, IC = 100 µA,
RS = 1 k, f = 1 kHz
4.0 dB
Input Impedance
VCE = 10 V, IC = 1 mA
2
8.0
f = 1 kHz
hie
k
VCE = 10 V, IC = 10 mA 0.25 1.25
f = 1 kHz
Small Signal Current Gain
Voltage Feedback Ratio
VCE = 10 V, IC = 1 mA,
50
f = 1 kHz
hfe
VCE = 10 V, IC = 10 mA,
75
f = 1 kHz
hre
VCE = 10 V, IC = 1 mA,
f = 1 kHz
50
75
300
375
300
375
Output Admittance
VCE = 10 V, IC = 1 mA,
5.0
35
f = 1 kHz
hoe
VCE = 10 V, IC = 10 mA,
25
µS
200
f = 1 kHz
Note:
(1) Pulse Test: Pulse width 300 µs - Duty cycle 2%


Features MMBT2222A Small Signal Transistor (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8 ) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View t c u rod P New Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0 .175) .005 (0.125) 0.079 (2.0) 0.035 ( 0.9) .037(0.95) .037(0.95) .045 (1.15 ) .037 (0.95) 0.031 (0.8) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dim ensions in inches and (millimeters) Me chanical Data Case: SOT-23 Plastic Pack age Weight: approx. 0.008g Marking Code : 1P Packaging Codes/Options: E8/10K pe r 13” reel (8mm tape) E9/3K per 7” reel (8mm tape) Features • NPN Silic on Epitaxial Planar Transistor for swit ching and amplifier applications. • T his transistor is also available in the TO-92 case with the type designation M PS2222A. Maximum Ratings & Thermal Cha racteristics Parameters Collector-Base Voltage Collector-Emitter Voltage Emitt er-Base Voltage Collector Current Power Dissipation Power Dissipation o.
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