MMBT2222ALT1 Purpose Transistors Datasheet

MMBT2222ALT1 Datasheet, PDF, Equivalent


Part Number

MMBT2222ALT1

Description

General Purpose Transistors

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT2222ALT1 Datasheet


MMBT2222ALT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2222LT1/D
General Purpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT2222LT1
MMBT2222ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
2
EMITTER
Rating
Symbol
2222
2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 40
60 75
5.0 6.0
600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
ICEX
ICBO
IEBO
IBL
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Max Unit
30 — Vdc
40 —
60 — Vdc
75 —
5.0 — Vdc
6.0 —
— 10 nAdc
— 0.01 µAdc
— 0.01
— 10
— 10
— 100 nAdc
— 20 nAdc
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT2222ALT1
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2222A only
MMBT2222
MMBT2222A
Collector – Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
Symbol
hFE
VCE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
VBE(sat)
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small – Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (MMBT2222A only)
MMBT2222A
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = – 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
fT
Cobo
Cibo
hie
hre
hfe
hoe
rb, Cc
NF
td
tr
ts
tf
Min
35
50
75
35
100
50
30
40
0.6
250
300
2.0
0.25
50
75
5.0
25
Max Unit
300
Vdc
0.4
0.3
1.6
1.0
Vdc
1.3
1.2
2.6
2.0
MHz
pF
8.0
pF
30
25
k
8.0
1.25
X 10– 4
8.0
4.0
300
375
mmhos
35
200
ps
150
dB
4.0
10
ns
25
225
ns
60
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2222LT1/D G eneral Purpose Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT2222LT1 MMBT22 22ALT1* *Motorola Preferred Device MAX IMUM RATINGS Rating Collector – Emitt er Voltage Collector – Base Voltage E mitter – Base Voltage Collector Curre nt — Continuous Symbol VCEO VCBO VEBO IC 2222 30 60 5.0 600 2222A 40 75 6.0 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipatio n FR– 5 Board(1) TA = 25°C Derate ab ove 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alu mina Substrate,(2) TA = 25°C Derate ab ove 25°C Thermal Resistance, Junction to Ambient Junction and Storage Tempera ture Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +15 0 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Character.
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