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MMBT2222LT1, MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage MMBT2222LT1 MMBT2222ALT1 Collector −Base Voltage MMBT2222LT1 MMBT2222ALT1 Emitter −Base Voltage MMBT2222LT1 MMBT2222ALT1 Collector Current − Continuous IC VEBO 5.0 6.0 600 mAdc 1 VCBO 60 75 Vdc Symbol VCEO 30 40 Vdc Value Unit Vdc 1 BASE
2 EMITTER
3
2 SOT−23 CASE 318 STYLE 6
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1 xxx M G G 556 mW mW/°C °C/W Max Unit
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
xxx = 1P or M1B M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 6
Publication Order Number: MMBT2222LT1/D
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222A Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222A Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222A Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 3) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3) (IC = 500 mAdc, VCE = 10 Vdc) (Note 3) Collector −Emitter Saturation Voltage (Note 3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base −Emitter Saturation Voltage (Note 3) (IC = 150 mAdc, IB = 15 mAdc) (.