MMBT2222LT1 Purpose Transistors Datasheet

MMBT2222LT1 Datasheet, PDF, Equivalent


Part Number

MMBT2222LT1

Description

General Purpose Transistors

Manufacture

ON

Total Page 6 Pages
Datasheet
Download MMBT2222LT1 Datasheet


MMBT2222LT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1 is a Preferred Device
General Purpose Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MMBT2222LT1
MMBT2222ALT1
VCEO
Value
30
40
Unit
Vdc
Collector −Base Voltage
VCBO
Vdc
MMBT2222LT1
60
MMBT2222ALT1
75
Emitter −Base Voltage
VEBO
Vdc
MMBT2222LT1
5.0
MMBT2222ALT1
6.0
Collector Current − Continuous
THERMAL CHARACTERISTICS
IC 600 mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 6
1
Publication Order Number:
MMBT2222LT1/D

MMBT2222LT1
MMBT2222LT1, MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222A
MMBT2222
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222A
MMBT2222
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222A
MMBT2222
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 3)
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A only
MMBT2222
MMBT2222A
Collector −Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage (Note 3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small −Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
MMBT2222A
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
IBL
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
Min
30
40
60
75
5.0
6.0
35
50
75
35
100
50
30
40
0.6
250
300
2.0
0.25
50
75
5.0
25
Max Unit
− Vdc
− Vdc
− Vdc
10 nAdc
0.01 mAdc
0.01
10
10
100 nAdc
20 nAdc
300
Vdc
0.4
0.3
1.6
1.0
Vdc
1.3
1.2
2.6
2.0
8.0
30
25
8.0
1.25
8.0
4.0
300
375
35
200
MHz
pF
pF
kW
X 10− 4
mmhos
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2


Features www.DataSheet4U.com MMBT2222LT1, MMBT22 22ALT1 MMBT2222ALT1 is a Preferred Devi ce General Purpose Transistors NPN Sil icon Features http://onsemi.com COLLECT OR 3 • Pb−Free Packages are Availa ble MAXIMUM RATINGS Rating Collector Emitter Voltage MMBT2222LT1 MMBT2222AL T1 Collector −Base Voltage MMBT2222LT 1 MMBT2222ALT1 Emitter −Base Voltage MMBT2222LT1 MMBT2222ALT1 Collector Curr ent − Continuous IC VEBO 5.0 6.0 600 mAdc 1 VCBO 60 75 Vdc Symbol VCEO 30 40 Vdc Value Unit Vdc 1 BASE 2 EMITTER 3 2 SOT−23 CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total D evice Dissipation FR− 5 Board (Note 1 ) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient To tal Device Dissipation Alumina Substrat e (Note 2) TA = 25°C Derate above 25° C Thermal Resistance, Junction−to−A mbient Junction and Storage Temperature Range Symbol PD 225 1.8 RqJA PD 300 2. 4 RqJA TJ, Tstg 417 −55 to +150 mW mW /°C °C/W °C 1 xxx M G G 556 mW mW/°C °C/W Max Unit MARKING DIAGRAM Maximum ratings are thos.
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