MMBT2222LT1

www.DataSheet4U.com MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage MMBT2222LT1 MMBT2222ALT1 Collector −Base Voltage MMBT2222LT1 MMBT2222ALT1 Emitter −Base Voltage MMBT2222LT1 MMBT2222ALT1 Collector Current − Continuous IC VEBO 5.0 6.0 600 mAdc 1 VCBO 60 75 Vdc Symbol VCEO 30 40 Vdc Value Unit Vdc 1 BASE 2 EMITTER 3 2 SOT−23 CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1 xxx M G G 556 mW mW/°C °C/W Max Unit MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. xxx = 1P or M1B M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code...