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MMBT2222LT1 Dataheets PDF



Part Number MMBT2222LT1
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistors
Datasheet MMBT2222LT1 DatasheetMMBT2222LT1 Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS V CEO V CBO V EBO IC Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistan.

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LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS V CEO V CBO V EBO IC Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING 2222 30 60 5.0 600 2222A 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P; ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage MMBT2222 (I C = 10 mAdc, I B = 0) MMBT2222A Collector–Base Breakdown Voltage MMBT2222 (I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage MMBT2222A MMBT2222 (I E = 10 µAdc, I C = 0) Collector Cutoff Current MMBT2222A MMBT2222A ( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current (V CB = 50 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0) (V CB = 50 Vdc, I E = 0, T A = 125°C) (V CB = 60 Vdc, I E = 0, T A = 125°C) Emitter Cutoff Current MMBT2222 MMBT2222A MMBT2222 MMBT2222A (V EB = 3.0 Vdc, I C = 0) Base Cutoff Current MMBT2222A (V CE = 60 Vdc, V EB(off) = 3.0 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in. MMBT2222A 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CEX I CBO I EBO I BL Min 30 40 60 75 5.0 6.0 — –– –– –– –– — — MMBT2222LT1 MMBT2222ALT1 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Max Unit — Vdc –– — Vdc — Vdc –– 10 nAdc µAdc 0.01 0.01 10 10 100 nAdc 20 nAdc O4–1/5 LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol ON CHARACTERISTICS DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3) MMBT2222A only MMBT2222 MMBT2222A hFE Collector–Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc) MMBT2222 MMBT2222A VCE(sat) (I C = 500mAdc, I B = 50 mAdc) MMBT2222 MMBT2222A Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) MMBT2222 MMBT2222A V BE(sat) (I C = 500 mAdc, I B = 50 mAdc) MMBT2222 MMBT2222A SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(4) MMBT2222 (I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance MMBT2222A MMBT2222 (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MMBT2222A Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) MMBT2222A (V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz) MMBT2222A Curren Base Time Comstant fT C obo C ibo h ie h re h fe h oe (V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz) MMBT2222A Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz) MMBT2222A rb, C C NF SWITCHING CHARACTERISTICS Delay Time (V CC = 30 Vdc, V EB(off) = – 0.5 Vdc Rise Time I C = 150 mAdc, I B1 = 15 mAdc) Storage Time (V CC = 30 Vdc, I C = 150 mAdc Fall Time I B1 = I B2 = 15 mAdc) td tr ts tf 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4.f T is defined as the frequency at which h fe extrapolates to unity. Min 35 50 75 35 100 50 30 40 –– –– –– –– –– 0.6 –– –– 250 300 –– –– –– 2.0 0.25 –— 50 75 5.0 25 –– –– Max Unit –– –– –– — — 300 –– –– — Vdc 0.4 0.3 1.6 1.0 Vdc 1.3 1.2 2.6 2.0 –– MHz –– 8.0 pF 30 pF 25 8.0 kΩ 1.25 8.0 X 10 –4 4.0 300 — 375 35 µmhos 200 150 ps 4.0 dB — 10 — 25 ns — 225 ns — 60 O4–2/5 h FE , DC CURRENT GAIN LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1 SWITCHING TIME EQUIVALENT TEST CIRCUITS + 16 V 0 – 2.0V 1.0 to 100µs, +30 V DUTY CYCLE ~~ 2% 1.0 k <2.0 ns +30 V 200 C S* < 10 pF + 16 V 0 –14 V 1.0 to 100µs, DUTY CYCLE ~~ 2% 1.0 k < 20 ns 1N914 200 C S*< 10 pF Scope rise time < 4.0ns – 4.0 V *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time 1000 700 500 300 200 V CE= 10 V V CE=1.0 V 100.


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