Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
3 COLLECTOR
1 BASE
MAXIMUM RATINGS
2 EMITTER
Rating
Symbol
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS
V CEO V CBO V EBO
IC
Characteristic
Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
2222 30 60 5.0 600
2222A 40 75 6.0 600
Unit Vdc Vdc Vdc mAdc
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.8 mW/°C 556 °C/W 300 mW
2.4 417 –55 to +150
mW/°C °C/W
°C
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P;
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage MMBT2222
(I C = 10 mAdc, I B = 0)
MMBT2222A
Collector–Base Breakdown Voltage
MMBT2222
(I C = 10 µAdc, I E = 0) Emitter–Base Breakdown Voltage
MMBT2222A MMBT2222
(I E = 10 µAdc, I C = 0) Collector Cutoff Current
MMBT2222A MMBT2222A
( V CE = 60 Vdc, I EB(off) = 3.0Vdc) Collector Cutoff Current
(V CB = 50 Vdc, I E = 0) (V CB = 60 Vdc, I E = 0) (V CB = 50 Vdc, I E = 0, T A = 125°C) (V CB = 60 Vdc, I E = 0, T A = 125°C) Emitter Cutoff Current
MMBT2222 MMBT2222A MMBT2222 MMBT2222A
(V EB = 3.0 Vdc, I C = 0) Base Cutoff Current
MMBT2222A
(V CE = 60 Vdc, V EB(off) = 3.0 Vdc) 1. FR–5 = 1.0 x 0.75 x 0.062 in.
MMBT2222A
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO V (BR)CBO V (BR)EBO
I CEX I CBO
I EBO I BL
Min
30 40 60 75 5.0 6.0 —
–– –– –– ––
—
—
MMBT2222LT1 MMBT2222ALT1
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
Max Unit
— Vdc –– — Vdc — Vdc –– 10 nAdc
µAdc 0.01 0.01 10 10 100 nAdc 20 nAdc
O4–1/5
LESHAN RADIO COMPANY, LTD.
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
ON CHARACTERISTICS
DC Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc,T A= –55°C ) (I C = 150 mAdc, V CE = 10 Vdc) (3) (I C = 150 mAdc, V CE = 1.0 Vdc) (3) (I C = 500 mAdc, V CE = 10 Vdc)(3)
MMBT2222A only
MMBT2222 MMBT2222A
hFE
Collector–Emitter Saturation Voltage(3) (I C = 150 mAdc, I B = 15 mAdc)
MMBT2222 MMBT2222A
VCE(sat)
(I C = 500mAdc, I B = 50 mAdc)
MMBT2222 MMBT2222A
Base–Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc)
MMBT2222 MMBT2222A
V BE(sat)
(I C = 500 mAdc, I B = 50 mAdc)
MMBT2222
MMBT2222A
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
MMBT2222
(I C = 20mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance(V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance
MMBT2222A MMBT2222
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
MMBT2222A
Input Impedance(V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Voltage Feedback Ratio(V CE=10 Vdc, I C= 1.0mAdc, f =1.0kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Small–Signal Current Gain(VCE=10Vdc,I C=1.0mAdc, f=1.0kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Output Admittance(V CE=10 Vdc, I C = 1.0 mAdc,f =1.0 kHz) MMBT2222A
(V CE= 10 Vdc, I C = 10 mAdc, f = 1.0 kHz)
MMBT2222A
Curren Base Time Comstant
fT C obo C ibo h ie h re h fe h oe
(V CB= 20 Vdc, I E = 20 mAdc, f = 31.8 MHz)
MMBT2222A
Noise Figure(VCE=10Vdc, IC=100µAdc, RS=1.0kΩ, f =1.0kHz) MMBT2222A
rb, C C NF
SWITCHING CHARACTERISTICS
Delay Time
(V CC = 30 Vdc, V EB(off) = – 0.5 Vdc
Rise Time
I C = 150 mAdc, I B1 = 15 mAdc)
Storage Time
(V CC = 30 Vdc, I C = 150 mAdc
Fall Time
I B1 = I B2 = 15 mAdc)
td tr ts tf
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4.f T is defined as the frequency at which h fe extrapolates to unity.
Min
35 50 75 35 100 50 30 40
–– –– –– ––
–– 0.6 –– ––
250 300 –– –– –– 2.0 0.25 –— 50 75 5.0 25
–– ––
Max Unit
–– –– –– — — 300 –– –– —
Vdc 0.4 0.3 1.6 1.0
Vdc 1.3 1.2 2.6 2.0
–– MHz
––
8.0 pF
30 pF
25
8.0 kΩ
1.25 8.0
X 10 –4
4.0
300 —
375
35 µmhos
200
150 ps 4.0 dB
— 10 — 25 ns — 225 ns — 60
O4–2/5
h FE , DC CURRENT GAIN
LESHAN RADIO COMPANY, LTD. MMBT2222LT1 MMBT2222ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 16 V 0 – 2.0V
1.0 to 100µs,
+30 V
DUTY CYCLE ~~ 2%
1.0 k
<2.0 ns
+30 V
200 C S* < 10 pF
+ 16 V
0 –14 V
1.0 to 100µs, DUTY CYCLE ~~ 2%
1.0 k
< 20 ns 1N914
200 C S*< 10 pF
Scope rise time < 4.0ns
– 4.0 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000 700 500
300 200
V CE= 10 V V CE=1.0 V
100.