MMBT2369ALT1

www.DataSheet4U.com MMBT2369LT1, MMBT2369ALT1 MMBT2369ALT1 is a Preferred Device Switching Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc mAdc 1 2 1 BASE 2 EMITTER 3 SOT−23 CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1 xxx M G G 556 mW mW/°C °C/W Max Unit MARKING DIAGRAMS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. xxx = M1J or 1JA M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT...