Switcing Transistors. MMBT2369ALT1 Datasheet


MMBT2369ALT1 Transistors. Datasheet pdf. Equivalent


MMBT2369ALT1


Switcing Transistors
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MMBT2369LT1, MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device

Switching Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3

• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 Unit Vdc Vdc Vdc Vdc mAdc 1 2 1 BASE

2 EMITTER

3 SOT−23 CASE 318 STYLE 6

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W °C 1 xxx M G G 556 mW mW/°C °C/W Max Unit

MARKING DIAGRAMS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

xxx = M1J or 1JA M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientat...



MMBT2369ALT1
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MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
Features
Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Symbol
VCEO
VCES
VCBO
VEBO
IC
Value
15
40
40
4.5
200
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1
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COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAMS
xxx M G
G
1
xxx = M1J or 1JA
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
MMBT2369LT1
MMBT2369LT1G
MMBT2369ALT1
SOT−23 3000/Tape & Reel
SOT−23 3000/Tape & Reel
(Pb−Free)
SOT−23 3000/Tape & Reel
MMBT2369ALT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMBT2369LT1/D

MMBT2369ALT1
MMBT2369LT1, MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(IC = 10 mAdc, IB = 0)
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
MMBT2369A
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = −55°C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
Collector −Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
Base −Emitter Saturation Voltage (Note 3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = −55°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small Signal Current Gain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
Turn−On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
Turn−Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
hFE
VCE(sat)
VBE(sat)
Cobo
hfe
ts
ton
toff
Min Typ Max
Unit
15 −
Vdc
40 −
Vdc
40 −
Vdc
4.5 −
Vdc
mAdc
− − 0.4
− − 30
mAdc
− − 0.4
40 − 120
− − 120
40 −
20 −
30 −
20 −
20 −
Vdc
− − 0.25
− − 0.20
− − 0.30
− − 0.25
− − 0.50
Vdc
0.7 − 0.85
− − 1.02
− − 1.15
− − 1.60
pF
− − 4.0
5.0 −
− 5.0 13
− 8.0 12
− 10 18
ns
ns
ns
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2




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