MMBT2369LT1 Switching Transistors Datasheet

MMBT2369LT1 Datasheet, PDF, Equivalent


Part Number

MMBT2369LT1

Description

Switching Transistors

Manufacture

Motorola

Total Page 8 Pages
Datasheet
Download MMBT2369LT1 Datasheet


MMBT2369LT1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBT2369LT1/D
Switching Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MMBT2369LT1
MMBT2369ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCES
VCBO
VEBO
IC
15
40
40
4.5
200
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
225
1.8
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556
300
2.4
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (3)
(IC = 10 mAdc, IB = 0)
Collector – Emitter Breakdown Voltage
(IC = 10 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 20 Vdc, IE = 0, TA = 150°C)
Collector Cutoff Current
(VCE = 20 Vdc, VBE = 0)
 1. FR– 5 = 1.0 0.75 0.062 in.
 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
MMBT2369A
2
EMITTER
Unit
Vdc
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
ICES
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Min
15
40
40
4.5
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Typ Max Unit
Vdc
——
Vdc
——
Vdc
——
Vdc
——
µAdc
— 0.4
— 30
µAdc
— 0.4
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

MMBT2369LT1
MMBT2369LT1 MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
DC Current Gain (3)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc)
(IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C)
(IC = 30 mAdc, VCE = 0.4 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C)
(IC = 30 mAdc, IB = 3.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
SMALL– SIGNAL CHARACTERISTICS
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369
MMBT2369A
MMBT2369
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
MMBT2369A
hFE
VCE(sat)
VBE(sat)
40
40
20
30
20
20
0.7
— 120
— 120
——
——
——
——
——
Vdc
— 0.25
— 0.20
— 0.30
— 0.25
— 0.50
Vdc
— 0.85
— 1.02
— 1.15
— 1.60
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small Signal CurrentGain
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Cobo
pF
— 4.0
hfe —
5.0 — —
Storage Time
(IB1 = IB2 = IC = 10 mAdc)
Turn–On Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc)
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc)
v v3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
ts ns
— 5.0 13
ton ns
— 8.0 12
toff ns
— 10 18
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2369LT1/D S witching Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT2369LT1 MMBT2369ALT1 * *Motorola Preferred Device MAXIMUM R ATINGS Rating Collector – Emitter Vol tage Collector – Emitter Voltage Coll ector – Base Voltage Emitter – Base Voltage Collector Current — Continuo us Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200 2 EMITTER Unit Vdc Vd c Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THER MAL CHARACTERISTICS Characteristic Tota l Device Dissipation FR– 5 Board(1) T A = 25°C Derate above 25°C Thermal Re sistance, Junction to Ambient Total Dev ice Dissipation Alumina Substrate,(2) T A = 25°C Derate above 25°C Thermal Re sistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 2 25 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tst g 417 – 55 to +150 Unit mW mW/°C °C /W mW mW/°C °C/W °C DEVICE MARKING MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwis.
Keywords MMBT2369LT1, datasheet, pdf, Motorola, Switching, Transistors, MBT2369LT1, BT2369LT1, T2369LT1, MMBT2369LT, MMBT2369L, MMBT2369, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)