MMBT2907 Si-Epitaxial PlanarTransistors Datasheet

MMBT2907 Datasheet, PDF, Equivalent


Part Number

MMBT2907

Description

Surface mount Si-Epitaxial PlanarTransistors

Manufacture

Diotec

Total Page 2 Pages
Datasheet
Download MMBT2907 Datasheet


MMBT2907
MMBT2907 / MMBT2907A
MMBT2907 / MMBT2907A
PNP
Surface Mount Si-Epi-Planar Switching Transistors
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage
Version 2015-05-12
0.4+0.1
-0.05
2.9 ±0.1
3
Type
Code
1.1+0.1
-0.2
Power dissipation – Verlustleistung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
12
1.9±0.1
Dimensions - Maße [mm]
1=B 2=E 3=C
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- VCEO
- VCBO
- VEBO
Ptot
- IC
Tj
TS
Grenzwerte (TA = 25°C)
MMBT2907 MMBT2907A
40 V
60 V
60 V
5V
250 mW 1)
600 mA
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- IC = 0.1 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 1 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 10 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 500 mA, - VCE = 10 V
MMBT2907
MMBT2907A
hFE
hFE
- IC = 150 mA, - VCE = 10 V
hFE
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
MMBT2907
MMBT2907A
- VCEsat
- VCEsat
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
35 –
75 –
50 –
100 –
75 –
100 –
30 –
50 –
100 – 300
– – 0.4 V
– – 1.6 V
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1

MMBT2907
MMBT2907 / MMBT2907A
Characteristics (Tj = 25°C)
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 150 mA, - IB = 15 mA
- IC = 500 mA, - IB = 50 mA
- VBEsat
- VBEsat
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 50 V, (E open)
MMBT2907
MMBT2907A
- ICBO
- ICBO
- VCB = 50 V, Tj = 125°C, (E open)
- ICBO
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 50 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCBO
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 2 V, IC = ic = 0, f = 1 MHz
CEBO
Switching times – Schaltzeiten (between 10% and 90% levels)
turn on
delay time
rise time
- VCC = 30 V, - VBE = 1.5 V
- IC = 150 mA, - IB1 = 15mA
ton
td
tr
turn off
storage time
fall time
- VCC = 30 V, - IC = 150 mA,
- IB1 = - IB2 = 15 mA
toff
ts
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
– – 0.4 V
– – 1.6 V
– – 1.3 V
– – 2.6 V
– – 20 nA
– – 10 nA
– – 20 µA
200 MHz
– – 8 pF
– – 30 pf
– – 45 ns
– – 10 ns
– – 40 ns
– – 100 ns
– – 80 ns
– – 30 ns
< 420 K/W 1)
MMBT2222 / MMBT2222A
MMBT2907 = 2B
MMBT2907A = 2F
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG


Features MMBT2907 / MMBT2907A MMBT2907 / MMBT290 7A PNP Surface Mount Si-Epi-Planar Sw itching Transistors Si-Epi-Planar Schal ttransistoren für die Oberflächenmont age Version 2015-05-12 0.4+0.1 -0.05 2.9 ±0.1 3 Type Code 2.4 ±0.2 1.3 0.1 1.1+0.1 -0.2 Power dissipation Verlustleistung Plastic case Kunstst offgehäuse Weight approx. – Gewicht ca. 12 1.9±0.1 Dimensions - Maße [mm ] 1=B 2=E 3=C Plastic material has UL classification 94V-0 Gehäusematerial U L94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform g egurtet auf Rolle PNP 250 mW SOT-23 (T O-236) 0.01 g Maximum ratings (TA = 25 °C) Collector-Emitter-volt. – Kollek tor-Emitter-Spannung Collector-Base-vol tage – Kollektor-Basis-Spannung Emitt er-Base-voltage – Emitter-Basis-Spann ung Power dissipation – Verlustleistu ng Collector current – Kollektorstrom (dc) Junction temperature – Sperrsch ichttemperatur Storage temperature – Lagerungstemperatur B open E open C open - VCEO - VCBO - VEBO.
Keywords MMBT2907, datasheet, pdf, Diotec, Surface, mount, Si-Epitaxial, PlanarTransistors, MBT2907, BT2907, T2907, MMBT290, MMBT29, MMBT2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)