MMBT2907A

® MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT2907A s Marking M29 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT2222A SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 o C Storage Temperature Max. Operating Junction Temperature Value -60 -60 -5 -0.6 -0.8 350 -65 to 150 150 Unit V V V A A mW o o C C February 2003 1/4 MMBT2907A THERMAL DATA R thj-amb Thermal Resistance Junction-Ambient 2 Max 357.1 o C/W Device mounted on a PCB area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX I BEX I CBO Parameter Collector Cut-off Current (V BE = -3 V) Base Cut-off Current (V BE = -3 V) Collector Cut-off Current (I E = 0) Test Conditions V CE = -30 V V CE = -30 V V CB = -50 V I C = -10 mA -60 Min. Typ. Max. -50 -50 -10 Unit nA nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I E = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Volt...