MMBT2907A Transistor PNP Datasheet

MMBT2907A Datasheet, PDF, Equivalent


Part Number

MMBT2907A

Description

Small Signal Transistor (PNP)

Manufacture

General

Total Page 3 Pages
Datasheet
Download MMBT2907A Datasheet


MMBT2907A
MMBT2907A
Small Signal Transistor (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
New Product
Mounting Pad Layout
12
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
0.037 (0.95)
0.035 (0.9)
0.037 (0.95)
0.079 (2.0)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
DimenDsimioennssioinns iinncinhcheess aanndd(m(imllimilelitmerse)ters)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2F
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)
0.031 (0.8)
Features
• PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
• This transistor is also available in the TO-92 case
with the type designation MPS2907A.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameters
Symbols
Value
Units
Collector-Emitter Voltage
-VCEO
60
V
Collector-Base Voltage
-VCBO
60
V
Emitter-Base Voltage
-VEBO
5.0
V
Collector Current
-IC 600 mA
Power Dissipation(1)
TA = 25°C
Derate above 25°C
Ptot
225 mW
1.8 mW/°C
Power Dissipation(2)
TA = 25°C
Derate above 25°C
Ptot
300 mW
2.4 mW/°C
Thermal Resistance Junction to Ambient Air FR-5 Board
Alumina Substrate
RΘJA
556
417 °C/W
Junction Temperature
Tj 150 °C
Storage Temperature Range
TS
– 55 to +150
°C
Notes:
(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2/28/00

MMBT2907A
MMBT2907A
Small Signal Transistor (PNP)
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
DC Current Gain
-VCE = 10 V, -IC = 0.1 mA
75
-VCE = 10 V, -IC = 1 mA
100
hFE -VCE = 10 V, -IC = 10 mA 100
-VCE = 10 V, -IC = 150 mA(1) 100 300
-VCE = 10 V, -IC = 500 mA(1)
50
Collector Cutoff Current
-ICEX -VEB = 0.5 V, -VCE = 30 V
50 nA
Collector Cutoff Current
-ICBO
-VCB = 50 V, IE = 0
-VCB = 50 V, IE = 0,TA = 125°C
0.01
10
µA
Emitter-Base Cutoff Current
-IBL -VEB = 0.5 V, -VCE = 30 V — — 50 nA
Collector-Emitter Saturation Voltage(1)
-VCEsat
-IC = 150 mA, -IB = 15 mA
-IC = 500 mA, -IB = 50 mA
0.4
1.6
V
Base-Emitter Saturation Voltage(1)
-VBEsat
-IC = 150 mA, -IB = 15 mA
-IC = 500 mA, -IB = 50 mA
1.3
2.6
V
Collector-Emitter Breakdown Voltage(1)
-V(BR)CEO
-IC = 10 mA, IB = 0
60 — —
V
Collector-Base Breakdown Voltage
-V(BR)CBO
-IC = 10 µA, IE = 0
60 — —
V
Emitter-Base Breakdown Voltage
-V(BR)EBO
-IE = 10 µA, IC = 0
5.0 — —
V
Current Gain-Bandwidth Product
fT
-VCE = 20 V, -IC = 50 mA
f = 100 MHz
200
MHz
Output Capacitance
Cobo
-VCB = 10 V, f = 1.0 MHz
IE = 0
8
pF
Input Capacitance
Cibo
-VEB = 2.0 V, f = 1.0 MHz
IC = 0
30
pF
Notes:
(1) Pulse test: Pulse width 300 µs, duty cycle 2.0%


Features MMBT2907A Small Signal Transistor (PNP) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) Top View t c u rod P New Mounting Pad Layout 0.037 (0.95) 0.037 (0.95) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector .007 (0 .175) .005 (0.125) .037(0.95) .037(0.9 5) 0.079 (2.0) .045 (1.15) .037 (0.95) 0.035 (0.9) 0.031 (0.8) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dim ensions in inches and (millimeters) Dim ensions in inches and (millimeters) Me chanical Data Case: SOT-23 Plastic Pack age Weight: approx. 0.008g Marking Code : 2F Packaging Codes/Options: E8/10K pe r 13” reel (8mm tape) E9/3K per 7” reel (8mm tape) Features • PNP Silic on Epitaxial Planar Transistor for swit ching and amplifier applications. • T his transistor is also available in the TO-92 case with the type designation M PS2907A. Maximum Ratings & Thermal Cha racteristics Parameters Collector-Emitt er Voltage Collector-Base Voltage Emitter-Base Voltage Collector Curren.
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