MMBT2907A Purpose Amplifier Datasheet

MMBT2907A Datasheet, PDF, Equivalent


Part Number

MMBT2907A

Description

PNP General Purpose Amplifier

Manufacture

Fairchild

Total Page 6 Pages
Datasheet
Download MMBT2907A Datasheet


MMBT2907A
Discrete POWER & Signal
Technologies
PN2907A
MMBT2907A PZT2907A
C
BE
TO-92
C
SOT-23
Mark: 2F
E
B
C
SOT-223
E
C
B
MMPQ2907
EB
B
BE
E
B
E CC
CCC
C
C
C
SOIC-16
NMT2907
C2
E1
C1
SOT-6
Mark: .2B
B2
E2
B1
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
60
60
5.0
800
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
ã 1997 Fairchild Semiconductor Corporation

MMBT2907A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IB Base Cutoff Current
ICEX Collector Cutoff Current
ICBO Collector Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 30 V, VEB = 0.5 V
VCE = 30 V, VBE = 0.5 V
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 150°C
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V*
IC = 500 mA, VCE = 10 V*
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
SMALL SIGNAL CHARACTERISTICS (except MMPQ2907 and NMT2907)
fT
Cobo
Cibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
SWITCHING CHARACTERISTICS (except MMPQ2907 and NMT2907)
ton Turn-on Time
td Delay Time
tr Rise Time
toff Turn-off Time
ts Storage Time
tf Fall Time
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
60 V
60 V
5.0 V
50 nA
50 nA
0.02 µA
20 µA
75
100
100
100 300
50
0.4
1.6
1.3
2.6
V
V
V
V
200 MHz
8.0 pF
30 pF
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)


Features PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A Discrete POWER & Signal Te chnologies PN2907A MMBT2907A C PZT29 07A C E C B E C B TO-92 E SOT-23 Ma rk: 2F B SOT-223 MMPQ2907 E B E B E B NMT2907 C2 E1 C1 C B2 E2 E B SOIC -16 C C C C C C C SOT-6 Mark: . 2B B1 PNP General Purpose Amplifier T his device is designed for use as a gen eral purpose amplifier and switch requi ring collector currents to 500 mA. Sour ced from Process 63. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, T stg Collector-Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Coll ector Current - Continuous TA = 25°C unless otherwise noted Parameter Valu e 60 60 5.0 800 -55 to +150 Units V V V mA °C Operating and Storage Junctio n Temperature Range *These ratings are limiting values above which the servic eability of any semiconductor device ma y be impaired. NOTES: 1) These ratings are based on a maximum junction tempera ture of 150 degrees C. 2) These are steady state limits. The fact.
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