MMBT2907A Switching Transistor Datasheet

MMBT2907A Datasheet, PDF, Equivalent


Part Number

MMBT2907A

Description

PNP Silicon Switching Transistor

Manufacture

Infineon Technologies AG

Total Page 9 Pages
Datasheet
Download MMBT2907A Datasheet


MMBT2907A
PNP Silicon Switching Transistor
Low collector-emitter saturation voltage
Complementary type:
SMBT2222A / MMBT2222A (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
SMBT2907A/MMBT2907A
32
1
Type
Marking
SMBT2907A/MMBT2907A s2F
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Peak base current
Total power dissipation
TS 77 °C
Junction temperature
Storage temperature
VCEO
VCBO
VEBO
IC
IB
IBM
Ptot
Tj
Tstg
60
60
5
600
100
200
330
150
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
220
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
V
mA
mW
°C
Unit
K/W
1 2011-09-30

MMBT2907A
SMBT2907A/MMBT2907A
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 60
-
-
IC = 10 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO 60
-
-
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO 5 - -
IE = 10 µA, IC = 0
Collector-base cutoff current
ICBO
VCB = 50 V, IE = 0
- - 0.01
VCB = 50 V, IE = 0 , TA = 150 °C
- - 10
Emitter-base cutoff current
IEBO
- - 10
VEB = 5 V, IC = 0
DC current gain1)
hFE
IC = 100 µA, VCE = 10 V
75 -
-
IC = 1 mA, VCE = 10 V
100 -
-
IC = 10 mA, VCE = 10 V
100 -
-
IC = 150 mA, VCE = 10 V
100 - 300
IC = 500 mA, VCE = 10 V
50 -
-
Collector-emitter saturation voltage1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage-1)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VCEsat
- - 0.4
- - 1.6
VBEsat
- - 1.3
- - 2.6
1Puls test: t 300µs, D = 2%
Unit
V
µA
nA
-
V
2 2011-09-30


Features PNP Silicon Switching Transistor • Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT 2222A (NPN) • Pb-free (RoHS compliant ) package • Qualified according AEC Q 101 SMBT2907A/MMBT2907A 32 1 Type Ma rking SMBT2907A/MMBT2907A s2F Pin Con figuration 1=B 2=E 3=C Package SOT2 3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collec tor-base voltage Emitter-base voltage C ollector current Base current Peak base current Total power dissipation TS ≤ 77 °C Junction temperature Storage te mperature VCEO VCBO VEBO IC IB IBM Pto t Tj Tstg 60 60 5 600 100 200 330 150 -65 ... 150 Thermal Resistance Parame ter Symbol Value Junction - solderin g point1) RthJS ≤ 220 1For calcula tion of RthJA please refer to Applicati on Note AN077 (Thermal Resistance Calcu lation) Unit V mA mW °C Unit K/W 1 2 011-09-30 SMBT2907A/MMBT2907A Electri cal Characteristics at TA = 25°C, unle ss otherwise specified Parameter Symbol Values min. typ. max. DC Characte.
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