MMBT2907A

PNP Silicon Switching Transistor Low collector-emitter saturation voltage Complementary type: SMBT2222A / MMBT2222A (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101 SMBT2907A/MMBT2907A 32 1 Type Marking SMBT2907A/MMBT2907A s2F Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings Parameter Symbol Value Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Peak base current Total power dissipation TS ≤ 77 °C Junction temperature Storage temperature VCEO VCBO VEBO IC IB IBM Ptot Tj Tstg 60 60 5 600 100 200 330 150 -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point1) RthJS ≤ 220 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2011-09-30 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 60 - - IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 60 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 5 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO VCB = 50 V, IE = 0 - - 0.01 VCB = 50 V, IE = 0 , TA = 150 °C - - 10 Emitter-base cutoff current IEBO - - 10 VEB = 5 V, IC = 0 DC current gain1) hFE IC = 100 µA, VCE = 10 V 75 - - IC = 1 mA, VCE = 10 V 100 - - IC = 10 mA, ...