MMBT2907A PNP Transistors Datasheet

MMBT2907A Datasheet, PDF, Equivalent


Part Number

MMBT2907A

Description

SMD General Purpose PNP Transistors

Manufacture

Diotec

Total Page 2 Pages
Datasheet
Download MMBT2907A Datasheet


MMBT2907A
MMBT2907A
MMBT2907A
SMD General Purpose PNP Transistors
SMD Universal-PNP-Transistoren
IC = -600 mA
hFE1 = 100 ... 300
Tjmax = 150°C
VCES = -60 V
Ptot = 250 mW
Version 2018-01-18
SOT-23
(TO-236)
0.4+0.1
-0.05
2.9 ±0.1
3
Type
Code
1
2
1.9±0.1
1=B
2=E
1.1+0.1
-0.2
3=C
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
Features
General Purpose
Compliant to RoHS, REACH,
Conflict Minerals 1)
Mechanical Data 1)
Taped and reeled
Weight approx.
Case material
RoHS
Pb
3000 / 7“
0.01 g
UL 94V-0
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Besonderheiten
Universell anwendbar
Konform zu RoHS, REACH,
Konfliktmineralien 1
Mechanische Daten 1)
Gegurtet auf Rolle
Gewicht ca.
Gehäusematerial
Dimensions - Maße [mm]
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL = 1
Type
Code
MMBT2907A = 2F
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
MMBT2222A
Maximum ratings 2)
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
DC
- VCEO
- VCBO
- VEBO
Ptot
- IC
Tj
TS
Grenzwerte 2)
60 V
60 V
5V
250 mW 3)
600 mA
-55...+150°C
-55…+150°C
Characteristics
DC current gain – Kollektor-Basis-Stromverhältnis 4)
- VCE = 10 V
- IC = 0.1 mA
- IC = 1 mA
- IC = 10 mA
- IC = 150 mA
- IC = 500 mA
Tj = 25°C Min.
75
100
hFE 100
100
50
Kennwerte
Typ.
Max.
––
300
1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
4 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1

MMBT2907A
MMBT2907A
Characteristics
Tj = 25°C
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)
- IC = 150 mA
- IC = 500 mA
- IB = 15 mA
- IB = 50 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 1)
- VCEsat
- IC = 150 mA
- IC = 500 mA
- IB = 15 mA
- IB = 50 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VBEsat
- VCB = 50 V
E open
E open Tj = 125°C
Gain-Bandwidth Product – Transitfrequenz
- ICBO
- VCE = 20 V, - IC = 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
fT
- VCB = 10 V, IE = ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
CCBO
- VEB = 2 V, IC = ic = 0, f = 1 MHz
CEBO
Switching times – Schaltzeiten (between 10% and 90% levels)
turn on time
delay time
rise time
- VCC = 30 V, - VBE = 1.5 V
- IC = 150 mA, - IB1 = 15mA
turn off time
storage time
fall time
- VCC = 30 V, - IC = 150 mA,
- IB1 = - IB2 = 15 mA
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
ton
td
tr
toff
ts
tf
RthA
Min.
Typ.
Kennwerte
Max.
0.4 V
1.6 V
1.3 V
2.6 V
10 nA
20 µA
200 MHz
– – 8 pF
– – 30 pf
– – 45 ns
– – 10 ns
– – 40 ns
– – 100 ns
– – 80 ns
– – 30 ns
< 420 K/W 1)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com/
© Diotec Semiconductor AG


Features MMBT2907A MMBT2907A SMD General Purpose PNP Transistors SMD Universal-PNP-Tran sistoren IC = -600 mA hFE1 = 100 ... 3 00 Tjmax = 150°C VCES = -60 V Ptot = 250 mW Version 2018-01-18 SOT-23 (TO- 236) 0.4+0.1 -0.05 2.9 ±0.1 3 Type Code 1 2 1.9±0.1 1=B 2=E 1.1+0.1 -0.2 3=C 2.4 ±0.2 1.3±0.1 ELV Typic al Applications Signal processing, Swit ching, Amplification Commercial grade 1 ) Features General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) Mech anical Data 1) Taped and reeled Weight approx. Case material WEEE RoHS Pb 30 00 / 7“ 0.01 g UL 94V-0 Typische Anw endungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Beso nderheiten Universell anwendbar Konform zu RoHS, REACH, Konfliktmineralien 1 M echanische Daten 1) Gegurtet auf Rolle Gewicht ca. Gehäusematerial Dimension s - Maße [mm] Solder & assembly condi tions 260°C/10s Löt- und Einbaubeding ungen MSL = 1 Type Code MMBT2907A = 2 F Recommended complementary NPN transistors Empfohlene komplementäre NPN-Tr.
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