MMBT2907A Transistor PNP Datasheet

MMBT2907A Datasheet, PDF, Equivalent


Part Number

MMBT2907A

Description

General Purpose Transistor (PNP)

Manufacture

Comchip Technology

Total Page 5 Pages
Datasheet
Download MMBT2907A Datasheet


MMBT2907A
General Purpose Transistor (PNP)
MMBT2907A
COMCHIP
www.comchiptech.com
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Ideal for Medium Power Amplification and Switching
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
COLLECTOR
3
1
BASE
2
EMITTER
12
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
2907
2907A
–40 –60
–60
–5.0
–600
Unit
Vdc
Vdc
Vdc
mAdc
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MDS030300B1
Page 1

MMBT2907A
General Purpose Transistor (PNP)
COMCHIP
www.comchiptech.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
MMBT2907
MMBT2907A
Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MMBT2907
MMBT2907A
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
Min
–40
–60
–60
–5.0
Max
–50
–0.020
–0.010
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
MMBT2907
MMBT2907A
IB
— –20
— –10
— –50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
hFE —
MMBT2907
35 —
MMBT2907A
75 —
(IC = –1.0 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
50 —
100 —
(IC = –10 mAdc, VCE = –10 Vdc)
MMBT2907
MMBT2907A
75 —
100 —
(IC = –150 mAdc, VCE = –10 Vdc) (3)
MMBT2907
MMBT2907A
——
100 300
(IC = –500 mAdc, VCE = –10 Vdc) (3)
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
MMBT2907
MMBT2907A
VCE(sat)
VBE(sat)
30
50
Vdc
–0.4
–1.6
Vdc
–1.3
–2.6
1.FR-5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
MDS030300B1
Page 2


Features General Purpose Transistor (PNP) COMCHI P www.comchip tech .com MMBT2907A Fea tures Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT 2222A) Ideal for Medium Power Amplific ation and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector Mechanical Data Case: S OT-23 Plastic Package Weight: approx. 0 .008g Top View COLLECTOR 3 1 BASE . 007 (0.175) .005 (0.125) .037(0.95) .0 37(0.95) 2 EMITTER .016 (0.4) .016 ( 0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Maximum R atings & Thermal Characteristics Rating Collector – Emitter Voltage Collecto r – Base Voltage Emitter – Base Vol tage Collector Current — Continuous C haracteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate abov e 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumi na Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction t.
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